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April 2011 - March 2012

Bistable Device

  1. T. Katayama, A. Yanai, K. Yukawa, S. Hattori, K. Ikeda, S. Koh, and H. Kawaguchi, “All-optical flip-flop operation at 1-mA bias current in polarization bistable vertical-cavity surface-emitting lasers with an oxide confinement structure,” IEEE Photon. Tech. Lett., Vol. 23, No. 23, pp. 1811-1813, December 2011.
  2. T. Katayama, A. Yanai, K. Yukawa, S. Hattori, K. Ikeda, S. Koh, and H. Kawaguchi, “All-optical flip-flop operation of polarization bistable VCSELs with an oxide confinement structure,” IEEE Photonics 2011 Conference (IPC11), paper WZ2, pp. 609-610, Arlington, VA, USA, October 12, 2011.
  3. T. Katayama, A. Yanai, K. Yukawa, S. Hattori, K. Ikeda, S. Koh, and H. Kawaguchi, “All-optical flip-frop operation of polarization bistable VCSELs with oxide confinement structure,” IEICE Technical Report, Vol. 111, No. 56, LQE2011-6, pp. 23-26, May 20, 2011.
  4. T. Katayama, and H. Kawaguchi, “All-Optical Flip-Flop Operation under Sub-mA Bias Current Using Oxide Confinement Polarization Bistable VCSELs,” Proceeding of the 2011 IEICE Society Conference, C-4-2, p. 217, Sapporo, Japan, September 13, 2011.
  5. H. Kawaguchi, “Optical Memory using Polarization Bistable VCSELs,” Proceeding of the 2011 IEICE Society Conference, C-4-34, p. 249, Sapporo, Japan, September 15, 2011.

Spintronics

  1. S. Koh, K. Ikeda, and H. Kawaguchi, “Correlation between morphology and electron spin relaxation time in GaAs/AlGaAs quantum wells on misoriented GaAs(110) substrates,” Journal of Applied Physics, Vol. 110, No. 4, pp. 043516-1~6, August 2011.
  2. N. Yokota, K. Ikeda, and H. Kawaguchi, “Comparison of measurement techniques for electron spin relaxation time in a GaAs/AlGaAs multiple quantum well,” Physica E, doi: 10.1016/j.physe.2012.01.006, 2012.
  3. S. Koh, S. Iba, K. Ikeda, and H. Kawaguchi, “Control of Electron Spin Relaxation Dynamics and Circularly Polarized Lasing in Semiconductor Lasers,” Journal of The Surface Science Society of Japan, Vol. 32, No. 12, pp. 755-760, 2011.
  4. S. Iba, S. Koh, K. Ikeda, and H. Kawaguchi, “Optically-pumped circularly polarized lasing in a (110)VCSEL with GaAs/AlGaAs QWs at room temperature,” Conference on Lasers and Electro-Optics (CLEO /IQEC 2011), JTuI 92, Baltimore, Maryland, USA, May 3, 2011.
  5. H. Kawaguchi, “Spin-photonic semiconductor devices based on (110) quantum wells: Spin-VCSELs and Spin-Switches,” (Invited) The 13th International Conference on Transparent Optical Networks (ICTON 2011), We.B5.1, pp. 1-4, Stockholm, Sweden, June 29, 2011.
  6. S. Iba, S. Koh, K. Ikeda, and H. Kawaguchi, “Circularly polarized lasing over a wide wavelength range in a (110)-oriented spin-VCSEL under optical spin injection,” Extended Abstracts (The 72th Autumn Meeting, 2011); The Japan Society of Applied Physics, 1p-S-8, p. 10-094, Yamagata, Japan, September 1, 2011.
  7. N. Yokota, K. Ikeda, T. Katayama, S. Koh, and H. Kawaguchi, “Consideration of Measurement Techniques for Electron Spin Relaxation Time in GaAs/AlGaAs MQWs,” Extended Abstracts (The 72th Autumn Meeting, 2011); The Japan Society of Applied Physics, 1p-S-5, p. 10-091, Yamagata, Japan, September 1, 2011.
  8. S. Iba, S. Koh, K. Ikeda, and H. Kawaguchi, “Lasing characteristics with circular polarization of a (110)-oriented spin-VCSEL at room temperature,” The 16th Symposium on the Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-16), pp. 127-128, Tokyo, Japan, November 29, 2011.
  9. N. Yokota, "Highly functional photonic devices with polarization control," 2nd Symposium on Advanced Photonics, International Commission for Optics, Science Council of Japan, No. 23, Tokyo, October 7, 2011.
  10. K. Ikeda, "Nonvolatile optical memory with surface-emitting semiconductor lasers," New Technology Presentation Meetings, Campus Innovation Center Tokyo/Japan Science and Technology Agency, pp. 13-16, Tokyo, July 28, 2011.

Nano-Laser

  1. K. Ikeda, Y. Fainman, K. A. Shore, and H. Kawaguchi, “Modified long-range surface plasmon polariton modes for laser nanoresonators,” Journal of Applied Physics, Vol. 110, No. 6, pp. 063106-1~6, September 2011.
  2. K. Ikeda, and H. Kawaguchi, “A Study on Laser Nanoresnators with Metallic Nanowires,” Proceeding of the 2011 IEICE Society Conference, C-4-26, p. 241, Sapporo, Japan, September 14, 2011.
  3. K. Ikeda, and H. Kawaguchi, “Nanolasers with surface plasmons on metallic nanowires,” IEICE Technical Report, Vol. 111, No. 359, LQE2011-130, pp. 33-38, December 16, 2011.
  4. K. Ikeda, K. Takeuchi, and H. Kawaguchi, “A Study on a Polarization Independent HCG and Its Fabrication Tolerance,” Extended Abstracts (The 59th Spring Meeting, 2012); The Japan Society of Applied Physics, 17p-F4-5, p. 05-075, Tokyo, Japan, March 17, 2012.
  5. K. Ikeda, and H. Kawaguchi, “A Study on Nanolasers with Metallic Nanowires (II),” Proceeding of the 2012 IEICE General Conference, C-4-14, p. 265, Okayama, Japan, March 21, 2012.
  6. Y. Tsunemi, K. Ikeda, S. Koh, T. Katayama, and H. Kawaguchi, “Fabrication of metal coated micro VCSELs.” 2011 GIST-NAIST-NCTU Joint Symposium on Advanced Materials, No. P-12, p. 30, Gwangju, Korea, November 15, 2011.

Award

  1. Hitoshi Kawaguchi; The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology (Prizes for Science and Technology), “The pioneering study of bistable semiconductor lasers and an optical RAM,” April 20, 2011.
  2. N. Yokota; Support Center for Advanced Telecommunications Technology Research, Foundation (SCAT), Scholarship for "Ultrafast switching of lasing circular polarizations in spin VCSELs for next generation large capacity optical communications," 2011-2013.

Press release

  1. "All-optical switching and memory with operation current less than 1 mA, a step for realization of optical router made by NAIST," Business & Technology Daily News, Sep 13, 2011.
  2. "All-optical memory with operation current less than 1 mA. The NEDO adopted a research project related to the basic elements technology," Chemical Daily, Sep 13, 2011.
  3. "A new device storing optical signals and controlling output timing with one third power consumption, a role for realization of next generation communication networks," Nikkei Business Daily, Sep 14, 2011.
  4. "NAIST, significant reduction of operation current of switching memory device, a key to the ALL-OPTICAL," O plus E, Vol. 33, No. 11, p. 1107, 2011.
  5. "NAIST has developed all-optical memory with operation current less than 1 mA," OPTRONICS, Vol. 30, No. 359, p. 71, 2011.
  6. "Lecture on future: the way to the sustainable information & communication technology, from a research at NAIST," Mainichi Daily News, Dec 6, 2011.