Publications

2014

Y. Ueoka, Y. Ishikawa, J. P. Bermundo, H. Yamazaki, S. Urakawa, M. Fujii, M. Horita, and Y. Uraoka, "Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress", ECS J. Sol. Stat. Sci. & Tech., 3, Q3001, (2014)

Mami N. Fujii, Y. Ishikawa, M. Horita, and Y. Uraoka, "Vapor-Induced Improvement in Field Effect Mobility of Transparent a-IGZO TFTs", ECS J. Sol. Stat. Sci. & Tech., 3, Q3050, (2014)

I. Inoue, K. Watanabe, H. Yamauchi, Y. Ishikawa, H. Yasueda, Y. Uraoka, and I. Yamashita, "Biological Construction of Single-Walled Carbon Nanotube Electron Transfer Pathways in Dye-Sensitized Solar Cells", ChemSusChem, 7, 2805, (2014)

K. Kado, M. Uenuma, K. Sharma, H. Yamazaki, S. Urakawa, Y. Ishikawa, and Y. Uraoka, "Thermal Analysis for Observing Conductive Filaments in Amorphous InGaZnO Thin Film Resistive Switching Memory", Appl. Phys. Lett., 105, 123506, (2014)

S. Mayumi, Y. Ikeguchi, D. Nakane, Y. Ishikawa, Y. Uraoka, and M. Ikeguchi, "Highly Stable Dye-Sensitized Solar Cells with Quasi-Solid-State Electrolyte Based on Flemion", Sol. Energy, 110, 648, (2014)

C. He, M. Uenuma, N. Okamoto, H. Kamitake, Y. Ishikawa, I. Yamashita, and Y. Uraoka, "A Distance-Controlled Nanoparticle Array Using PEGylated Ferritin", Mater. Res. Exp., 1, 45410, (2014)

A. Uzum, K. Fukatsu, H. Kanda, Y. Kimura, K. Tanimoto, S. Yoshinaga, Y. Jiang, Y. Ishikawa, Y. Uraoka, and S. Ito, "Silica-Sol-Based Spin-Coating Barrier Layer Against Phosphorous Diffusion for Crystalline Silicon Solar Cells", Nanoscale Res. Lett., 9, 659, (2014)


2013

Y. Tojo, A. Miura, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization", Thin Solid Films, 540, pp 266–270 (2013)

M. Uenuma, T. Ban, N. Okamoto, B. Zheng, Y. Kakihara, M. Horita, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Memristive nanoparticles formed using a biotemplate", RSC Adv., 3, pp 18044–18048 (2013)

K. Yoshitsugu, M. Horita, Y. Ishikawa and Y. Uraoka, "Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition ", Phys. Status Solidi C, 10, pp 1426–1429 (2013)

S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa and Y. Uraoka, "Thermal distribution in amorphous InSnZnO thin-film transistor ", Phys. Status Solidi C, 11, pp 1561–1564 (2013)

S. Saijo, Y. Ishikawa, B. Zheng, N. Okamoto, I. Yamashita and Y. Uraoka, "Plasmon Absorbance of SiO2-Wrapped Gold Nanoparticles Selectively Coupled with Ti Substrate Using Porter Protein ", Jpn. J. Appl. Phys., 52, 125201 (2013)

J. P. Bermundo, Y. Ishikawa, H. Yamazaki, T. Nonaka and Y. Uraoka "Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors ", Journal of Solid State Science and Technology, 3(2), Q16-Q19 (2014)

M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y. Ishikawa, H. Watanabe, I. Yamashita and Y. Uraoka "CrystallizationofamorphousGethin film usingCunanoparticle synthesized anddeliveredbyferritin ", Journal of Crystal Growth, 382, pp 31-35 (2013)

Y. Ishikawa, S. Araki, M. Zhang and Y. Uraoka, "Size Control in ZnO Nano-pillar Fabrication using a Gel-Nanoimprint Process ", Applied Mechanics and Materials, 372, pp 149-152 (2013)

Y. Ueoka, Y. Ishikawa, N. Maejima, F. Matsui, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, H. Daimon, and Y. Uraoka, "Analysis of electronic structure of amorphous InGaZnO/SiO2 interface by angleresolved X-ray photoelectron spectroscopy ", J. Appl. Phys., 114, 163713 (2013)

Y. Mulyana, M. Horita, Y. Ishikawa, Y. Uraoka1 and S. Koh, "Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene ", Appl. Phys. Lett., 103, 063107 (2013)

H. Yamazaki, Y. Ishikawa, M. Fujii, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Ando, N. Maejima, H. Matsui, F. Matsui, H. Daimon, and Y. Uraoka, "The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability Toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors", ECS J. Sol. Stat. Sci. & Tech., 3, Q20, (2013)
2012

T. Doe, Y. Ishikawa, M. Horita, T. Nishida, and Y. Uraoka, "Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method", Jpn. J. Appl. Phys., 51, 03CC02 (2012)

L. Lu, Y. Miura, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, "Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa2O6", Jpn. J. Appl. Phys., 51, 03CB05 (2012)

K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, and Y. Uraoka, "Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing", Jpn. J. Appl. Phys., 51, 03CA03 (2012)

T. Nishida, K. Fuse, M. Furuta, Y. Ishikawa, and Y. Uraoka, "Crystallization Using Biomineralized Nickel nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation", Jpn. J. Appl. Phys., 51, 03CA01 (2012)

M. Uenuma, B. Zheng, K. Kawano, M. Horita, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles", Appl. Phys. Lett., 100, 083105 (2012)

Y. Kawamura, M. Tani, N. Hattori, N. Miyake, M. Horita, Y. Ishikawa, and Y. Uraoka, "Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer 16:01 2012/03/27 Deposition", Jpn. J. Appl. Phys., 51, 02BF04 (2012)

M. Uenuma, B. Zheng, T. Imazawa, M. Horita, T. Nishida, Y. Ishikawa, H. Watanabe, I. Yamashita and Yukiharu Uraoka, "Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin", Applied Surface Science, 258, 3410 (2012)

L. Lu, T. Nishida, M. Echizen, K. Uchiyama, and Y. Uraoka, "Capacitance-voltage and leakage-current characteristics of sol-gel-derived crystalline and amorphous SrTa2O6 thin films", Thin Solid Films, 520, 3620 (2012)


2011

Li Lu, Takashi Nishida, Masahiro Echizen, Kiyoshi Uchiyama and Yukiharu Uraoka, "Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa2O6 Thin Films Fabricated by Sol-Gel Method", Ferroelectrics, 421, 82, (2011)

M. Fujii, Y. Ishikawa, M. Horita, and Y. Uraoka, "Unique Phenomenon in Degradation of Amorphous In2O3-Ga2O3-ZnO Thin-Film Transistors under Dynamic Stress", Applied Physics Express, 4, 104103, (2011)

K. Ohara, B. Zheng, M. Uenuma, Y. Ishikawa, K. Shiba, I. Yamashita, and Y. Uraoka, "Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method", Applied Physics Express, 4, 085004, (2011)

M. Kobayashi, S. Kumagai, B. Zheng, Y. Uraoka, T. Douglas, and I. Yamashita, "Water-soluble carbon nanotube network conjugated by nanoparticles with defined nano-meter gaps", Chem. Commun., 47, 3475-3477, (2011)

B. Zheng, M. Uenuma, K. Iwahori, N. Okamoto, N. Naito, Y. Ishikawa, Y. Uraoka and I. Yamashita, "Sterically controlled docking of gold nanoparticles on ferritin surface by DNA hybridization ", Nanotechnology, 22, 275312, (2011)

M. Uenuma, K. Kawano, B. Zheng, N. Okamoto, M. Horita, S. Yoshii, I. Yamashita and Y. Uraoka, "Resistive random access memory utilizing ferritin protein with Pt nanoparticles", Nanotechnology, 22, 215201, (2011)

K. Ohara, Y. Tojo, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru, and Y. Uraoka, "Floating Gate Memory with Biomineralized Nanodots Embedded in HfO2", IEEE Trans. Nanotechnology, 10, Issue 3, 576, (2011)

Y. Kawamura, N. Hattori, N. Miyatake, M. Horita, and Y. Uraoka, "ZnO Thin Films Fa-bricated by Plasma-assisted Atomic Layer Deposition", Jpn. J. Appl. Phys., 50, 04DF05, (2011)

Y. Tojo, A. Miura, I. Yamashita, and Y. Uraoka, "Positional Control of Crystal Grains in Silicon Thin Film Utilizing Cage-Shaped Protein", Jpn. J. Appl. Phys., 50, 04DL12, (2011)

L. Lu, T. Nishida, M. Echizen, K. Uchiyama, and Y. Uraoka, "Thickness Dependence of Electrical Properties for High-k SrTa2O6 Thin Films Fabricated by Sol-Gel Method", Jpn. J. Appl. Phys., 50, 03CA05, (2011)

B. Zheng, N. Zettsu, M. Fukuta, M. Uenuma, T. Hashimoto, K. Gamo, Y. Uraoka, I. Yamashita, and H. Watanabe, "Versatile protein-based bifunctional nano-systems (encapsulation and directed assembly): Selective nanoscale positioning of gold nanoparticle-viral protein hybrids", Chem. Phys. Lett., 506, 76, (2011)


2010

L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Electrical properties of Ba0.5Sr0.5Ta2O6 thin film fabricated by Sol-Gel method", IEICE Trans. on Electronics, E93-C, 1511, (2010)

L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Annealing and Composition Effects of (BaxSr1-x)Ta2O6 Thin Films Fabricated by Sol-Gel Method", Jpn. J. Appl. Phys., 49, 09MA14, (2010)

C. -H. Huang, M. Igarashi, S. Horita, M. Takeguchi, Y. Uroaka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application", Jpn. J. Appl. Phys., 49, 04DL16, (2010)

L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Electrical properties of (BaxSr1-x)Ta2O6 thin films using Sol-Gel methods", Trans. of the Mat. Res. Soc. of Japan, 35, 177, (2010)

T. Nishida, K. Kubo, M. Echizen, H. Takeda, K. Uchiyama, and T. Shiosaki, "Fabrication of PbTiO3 Nanocrystals on Atomically Flat Sapphire Substrates by Sputtering", Key Eng. Mat., 421-422, 502-505, (2010)

T. Nozaka, Y. Mizutani, G. Bhakdisongkhram, K. Kawakami, M. Echizen, T. Nishida, H. Takeda, K. Uchiyama, and T. Shiosaki, "Preparation of (Ba1-x,Srx)TiO3 Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties", Key Eng. Mat., 421-422, 127-130, (2010)

Y. Yoneda, H. Saitoh, K. Yoshii, T. Nishida, H. Hayakawa, and N. Ikeda, "Growth and characterization of bismuth magnesium titanate Bi(Mg1/2Ti1/2)O3", Key Eng. Mat., 421-422, 30-33, (2010)

B. Zheng, M. Uenuma, Y. Uraoka, and I. Yamashita, "Construction of ferritin dimer by breaking its symmetry", Nanotechnology, 21, 445602, (2010)

B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka, "Site-directed delivery of ferritin-encapsulated gold nanoparticles", Nanotechnology, 21, 045305, (2010)

Y. Kawamura, M. Horita, and Y. Uraoka, "Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition", Jpn. J. Appl. Phys., 49, No.4, 04DF19, (2010)

Y. Kawamura, K. Yamasaki, T. Yamashita, Y. Sugawara, Y. Uraoka, and M. Kimura "Crystallization by Green-laser Annealing for Three-dimensional Device Application", J. Korean Phys. Soc., 56, No.5, 1456, (2010)

K. Yamasaki, M. Ochi, Y. Sugawara, I. Yamashita, and Y. Uraoka, "Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin", J. Korean Phys. Soc., 56, No.3, 842, (2010)

K. Ohara, I. Yamashita, and Y. Uraoka, "Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator", Jpn. J. Appl. Phys., 49, 04DJ05, (2010)

B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka, "Site-directed delivery of ferritin-encapsulated gold nanoparticles", Nanotechnology, 21, No.4, 045305, (2010)


2009

M. Horita, T. Kimoto, and J. Suda, "Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11-20) and (1-100) Planes under Group-III-Rich Conditions", Applied Physics Express, 2, 091003, (2009)

C. Huang, M. Igarashi, M. Wone, Y. Uraoka, T. Fuyuki, M. Takeguchi, I. Yamashita, and S. Samukawa, "Two-Dimesional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices", Jpn. J. Appl. Phys., 48, 04C187-1, (2009)

A. Miura, R. Tanaka, Y. Uraoka, N. Matsukawa, and I. Yamashita, "The characterization of a single discrete bionanodot for memory device application", Nanotechnology, 20, 125702-1, (2009)

M. Fujii, Y. Uraoka, T. Fuyuki, J. S. Jung and J. Y. Kwon, "Experimental and Theoretical Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors", Jpn. J. Appl. Phys., 48, 04C091-1, (2009)

Y. Tojo, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Controlled Reduction of Bionanodots for Better Charge Strage Characteristics of Bionanodots Flash Memory", Jpn. J. Appl. Phys., 48, 04C190-1, (2009)

K. Ohara, I. Yamashita, T. Yaegashi, M. Moniwa, H. Yoshimaru, and Y. Uraoka, "Floating gate memory with biomineralized nanodots embedded in High-k gate dielectric", Applied Physics Express, 2, 095001, (2009)

E. Machida, Y. Uraoka,T. Fuyuki, R. Kokawa, T. Ito, and H. Ikenoue, "Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy", Appl. Phys. Lett., 94, 182104, (2009)

K. Uchiyama, Y. Isse, Y. Hori, T. Nishida, Y. Uraoka, T. Kariya, and K. Yanagimoto, "Structural and Electrical Characterization of Y-Doped SrZrO3 Thin Films for Solid Oxide Fuel Cells", Proceedings of the sixth Thin-Films Materials and Devices Meeting, 100228102-1, (2009)

L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Fabrication and Evaluation of SrTa2O6 Thin Films Using Chemical Solution Deposition Method", Proceedings of the sixth Thin-Films Materials and Devices Meeting, 100228043-1, (2009)

Y. Kawamura and Y. Uraoka, "Electrical properties of ZnO-TFTs by atomic layer deposition", Proceedings of the sixth Thin-Films Materials and Devices Meeting, 100228074-1, (2009)

Y. Kawamura and Y. Uraoka, "ZnO Thin Film Transistors fabricated by atomic layer deposition", Proceedings of the Fall Meeting of Material Research Society, 1201, 1201-H10-27, (2009)

M. Fujii, T. Maruyama, M. Horita, K. Uchiyama, J. S. Jung, J. Y. Kwon, and Y. Uraoka, "Electrical and thermal stress analysis of In2O3-Ga2O3-ZnO thin-film transistors", Proceedings of the Fall Meeting of Material Research Society, 1201, 1201-H05-11, (2009)

K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshimaru, "Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics", Jpn. J. Appl. Phys., 48, No.4, (2009)

T. Sato, A. Ueno, T. Yara, E. Miyamoto, Y. Uraoka, T. Kubota, and S. Samukawa, "Irradiatio-damages in atmospheric plasma used in a resist ashing process for thin film transitors", Jpn J. Appl. Phys., 48, No.3, 03B009, (2009)


Journals from 2000 to 2008 were published when Prof. Uraoka was the Associate Professor of Microelectronic Device Science and Laboratory of NAIST.

2008

A. Miura, Y. Uraoka, T. Fuyuki, S. Kumagai, S. Yoshii, N. Matsukawa, and I. Yamshita, "Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node", J. Appl. Phys., 103, No.7, 074503-1, (2008)

A. Miura, R. Tsukamoto, S. Yoshii, I. Ymashita, Y. Uraoka, and T. Fuyuki, "Non-volatile flash memory with discrete bionanodt floating gate assembled by protein template", Nanotechnology, 19, (208), 255201, (2008)

M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon, "Thermal analysis of degradation in Ga2O3-In2O3-ZnO thin film transistors", Jpn. J. Appl. Phys., 47, No.8, 6236 , (2008)

S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes in Co-Ferritin Nanoparticles Induced by Ion Bombardment as Determined by Kelvin Probe Force Microscopy in High Vacuum", Jpn. J. Appl. Phys., 47, No.8, 6160, (2008)

S-I. Yamamoto, K. Kobayashi, H. Yamada, H. Yoshioka, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Electrical Characterisitics of ferritin cores Investegated by Kelvin Probe Force Microscopy", Journal of Physics, 100, 52004, (2008)

S-I. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes in Co-Ferritin nanoparticles Induced by Ion Bombardment as Determined by Kelvin Probe Force Microscopy in High Vacuum", Jpn. J. Appl. Phys., 47, No.7, 6160, (2008)

S. Samukawa, T. Kubota, C. H. Huang, T. Hashimoto, M. Igarashi, K. Nishioka, M. Takeguchi, Y. Uraoka, and I. Yamashita, "New silicon quantum-well structure with controlled diameter and thickness fabricated with ferritin core amsk and chlorine neutral etrching", Applied Physics Express, 1, No.7, 0474002, (2008)

S. Yamamoto, K. Kobayashi, H. Yamada, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Surface Potential Evaluations of Ferritin Nanodots by Kelvin Force Microscopy", Journal of Scann Pobe Microsc., 3, 1, (2008)

T. Nakamura, H. Kuraseko, K. Hanazawa, H. Koaizawa, Y. Uraoka, T. Fuyuki, and A. Mimura, "Fabrication of Poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate", Appl. Phys. Lett., 93, 241503, (2008)


2007

S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Thermal Degradation Under Pulse Operation in Low-Temperature p-channel Poly-Si Thin Film Transistors", IEEE/T-ED, 54, No.2, 297, (2007)

T. Kubota, T. Hashimoto, Y. Ishikawa, A. Miura, M. Takeguchi, K. Nishioka, R. Tanaka, K. Ichikawa, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Charging and coulomb Staircase effects in silicon nano-disc Structure Fabricated by defect-free Cl Neutral Beam Process", Appl. Phys. Lett., 89, 233127 (2006)

H. Ueno, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, K. B. Park, J. M. Kim, J. Y. Kwon, and T Noguchi, "Reliability Analysis of Ultra-Low-Temperature Poly-Si Thin Film Transistors", Jpn. J. Appl. Phys., 46, No.3B, 1303, (2007)

Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing", Jpn. J. Appl. Phys. Lett, 46, No.8, L164, (2007)

Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Evaluation by μ-PCD in Double-Layered Poly-Si Thin FilmsCrystallized by Solid Green Laser Annealing", Jpn. J. Appl. Phys., 46, No.12, 7607, (2007)

Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High Performance Thin Film Transistors", IEEE EDL., 28, No.5, 395, (2007)

H. Ueno, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, and T. Serikawa, "Reliability of low temperature poly-Si Thin Film Transistors with ultrathin gate oxide", Jpn. J. Appl. Phys., 46, No.7A, (2007)

K. Ichikawa, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, E. Takahashi, T. Hayashi, and K. Ogata, "Low temperature poly-Si Thin Film Transistors flash memory with Si nanocrystal dot", Jpn. J. Appl. Phys. Lett. 46, No.27, L661, (2007)

T. Kubota, T. Hashimoto, Y. Ishikawa, A. Miura, M. Takeguchi, K. Nishioka, R. Tanaka, K. Ichikawa, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Coulomb-staircase effect in silicon-nanodisk structures fabricated by low-energy chlorine netral beams", J. Appl. Phys., 101, 124301, (2007)

T. Kubota, T. Baba, S. Saito, S. Yamazaki, S. Kumagai, T. Matsui, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Low-damage fabrication of high aspect nanocolumns by using netral beams and ferritin-iron-core mask", J. Vac. Sci Technok. B, 25, (3), 760, (2007)

K. Yamada, S. Yoshii, S.Kumagai, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Effects of Dot Density and Dot Size on Charge Injection Characteristics in Nanodot Array Produced by Protein Supramolecules", Jpn J. Appl. Phys., 46, No.11, 7549, (2007)

A. Miura, Y. Uraoka, T. Fuyuki, S. Kumagai, S. Yoshii, N. Matsukawa, and I. Yamshita, "bionaodot monolayer array fabrication for nonvolatile memory application", Surface Science Letters, 601, L.81, (2007)

K. Ichikawa, Y. Uraoka, P. Punchaipetch, H. Yano, T. Hatayama, T. Fuyuki, and I. Yamashita, "Low-temperature poly-Si TFT flash memory with ferritin", Jpn. J. Appl. Phys., 46, No.34, L804, (2007)

S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Surface Potential Difference of Biomineralized Inorganic nanodot by Kelvin Force Microscopy", Jpn. J. Appl. Phys., 46, No.8B, 5647, (2007)

S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes Induced by Ion Bombardment in Ferrtin Nanoparticles", Journal of Physics, 61, 1276, (2007)

Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber", Appl. Phys. Lett., 91, 203518, (2007)

S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Suppression of Self-Heating in Low-Temperature Polycrystalline Silicon Thin Film Transitors ", Jpn. J. Appl. Phys., 46, 4A, 1387, (2007)


2006

S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Analysis of Thermal Distribution in Low Temperature Polycrystalline Silicon p-channel Thin Film Transistors", Jpn. J. Appl. Phys., 45, No.1A, 7, (2006)

T. Hikono, T. Matsumura, A. Miura, Y. Uraoka, T. Fuyuki, M. Takeguchi, S. Yoshii, and I. Yamashita, "Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein", Appl. Phys. Lett., 88, 023108, (2006)

T. Hikono, Y. Uraoka, T. Fuyuki, M. Takeguchi, and I. Yamashita, "Reduction of Core in Cage Protein for Application to Electron Device", Surface Science, 600, 2817, (2006)

T. Yamazaki, Y. Uraoka, and T. Fuyuki, "Large grain poly crystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply", Thin Solid Film, 487, 26, (2005)

S. Honda, T. Mates, M. Ledinsky, J. Oswald, A. Fejfar, J. Kocka, T. Yamazaki, Y. Uraoka, and T. Fuyuki, "Effect of hydrogen passivation on polycrystalline silicon thin films", Thin Solid Films, 487, issue 1-2, 152, (2005)

P. Punchaipetch, M. Miyashita, Y. Uraoka, T. Fuyuki, T. Sameshima, and S. Horii, "Improving High-k Gate Dielectric Properties by High-Pressure Water Vapor Annealing", Jpn. J. Appl. Phys., 45, No.4, L120, (2006)

Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Evaluation Technique for Reliability in Low-Temperature Poly-Si Thin Film Transistors", J. Korean Phys. Soc., 48, S55, (2006)

A. Miura, T. Hikono, T. Matsumura, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, S. Yoshii, and I. Yamashita, "Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as A Storage Node", Jpn. J. Appl. Phys, 45, No.01, L1, (2006)

P. Punchaipetch, K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, T.Hayashi, and K. Ogata, "Charge Transport though Si Nanocrystal Dots Depending on Tunnel Oxide Thickness in Floating Gate Memories", J. Jpn. J. Appl. Phys., 45, No.5A, 3997, (2006)

P. Punchaipetch, K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, and T.Hayashi, "Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories", J.Vac. Sci. Technol., B24, (3), 1271, (2006)

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama,T. Fuyuki, and T. Sameshima, "Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing", Jpn J. Appl. Phys., 45, No.7, 5657, (2006)

K. Yamada, S. Yoshii, S.Kumagai, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Floating Gate MOS Capacitor Employing Array of High-Density Nanodots Produced by Protein Supermolecule", Jpn J. Appl. Phys., 45, No.11, 8946, (2006)

Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Effect in Low Temperature Poly-Si TFTs with Sputtered Gate SiO2 Film", J. Korean Phys. Soc., 49, No.4, 1477, (2006)

K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. Hayashi, and K. Ogata, "New Fabrication Technique for the Floating Gate Memory with Si Nanodot using Side-Wall Type Plasma Enhanced Chemical Vapor Deposition", J. Korean Phys. Soc., 49, No.2, 569, (2006)

P. Punchaipetch, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. Hayashi, A. Sano, and S. Horii, "Enhancing memory efficiency of Sinanocrystal floating gate memories with high-k gate oxides", Appl. Phys. Lett., 89, 1, (2006)

T. Serikawa, M. Miyashita, Y. Uraoka, and T. Fuyuki, "Sputter-Deposited Thin Gate SiO2 Films for High Quality Polycrystalline Silicon Thin Film Transistors", Jpn. J. Appl. Phys., 45, No.5B, 4358, (2006)


2005

T. Kubota, T. Baba, H. Kawashima, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Study on neutral-beam etching conditions for fabrication of 7-nm-diameter nanocolumn structure using ferritin iron-core masks", J. Vac. Sci. Technol., B23, (2), 534, (2005)

Y. Uraoka, K. Kitajima, H. Kirimura, H. Yano, H. Yano, T. Hatayama, and T. Fuyuki, "Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries", Jpn. J. Appl. Phys., 44, 2895, (2005)

H. Kirimura, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Study of low-temerature crystallization of amorphous Si film obtained using ferritin with Ni nanoparticles", Appl. Phys. Lett., 86, 262106, (2005)

K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, T. Hayashi, and K. Ogata, "Electon Injection into Si Nanodot Fabricated by Side-Wall Plasama Enhanced Chemical Vapor Deposition", Jpn. J. Appl. Phys., 44, 26, L836, (2005)

T. Fuyuki, K.Kitajima, H. Yano, T. Hatayama, Y. Uraoka, S. Hashimoto, and Y. Morita, "Thermal degradation of low temperature poly-Si TFT", Thin Solid Film, 216, (2005)

Y. Uraoka, H. Honda, T. Fuyuki, T. Sasaki, and M. Yasuhira, " Hot Carrier Effect in Ultra Thin Gate Oxide Metal Oxide Semiconductor Field effect Transistors", Jpn. J. Appl. Phys., 44, 8, 5889, (2005)


2004

Y. Uraoka, N. Hirai, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Analysis in Low-Temperature Poly-Si TFTs Using Picosecond Emission Microscope", IEEE Trans. Electron Devices, 51, No.1, 28, (2004)

T. Kubota, T. Baba, S. Samukawa, H. Kawashima, Y. Uraoka, T. Fuyuki, and I. Yamashita, "A 7-nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams", Appl. Phys. Lett., 84, No.9, 1555, (2004)

H. Kirimura, K. Kubota, E. Takahashi, S. kishida, K. Ogata, Y. Uraoka, and T. Fuyuki, "Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals", Jpn. J. Appl. Phys., 43, No.12, 7929, (2004)

P. Punchaipetch, T. Okamoto, H. Nakamura, Y. Uraoka, T. Fuyuki, and S. Horii, "Effect of Nitrogen on Electrical and Physcal Properties oof Polyatomic Layer Chemical Vapor Deposition HfSiO Gate Dielectrics", Jpn. J. Appl. Phys., 43, 7815, (2004)


2003

Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen", Jpn, J. Appl. Phys., 42, 1145, (2003)

M. Furuta, Y. Uraoka, and T. Fuyuki, "Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures", Jpn. J. Appl. Phys., 42, 4257, (2003)

Y. Inoue, H. Ogawa, T. Endo, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki, "Reliability of Low Temperature Poly-Si Thin Film Transistors", Solid State Phenomena, 93, 43, (2003)

T. Kawakita, H. Nakagawa, Y. Uraoka, and T. Fuyuki, "Analysis of Hot Carrier Effect in Low Temperature Poly-Si Gate-Overlapped Lightly Doped Drain Thin Film Transistors", Jpn. J. Appl. Phys., 42, 3354, (2003)

T. Hikono, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Novel Method for making Nanodot Arrays using a cage-like Protein", Jpn. J. Appl. Phys., 42, L.398, (2003)

G. Yamazaki, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Nano-etching Using Nanodits Mask Fabricated by Bio-nano-process", Journal of Photopolymer Science and Technology, 16, No.3, 439, (2003)

H. Nakagawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, and Y. Morita, "Hot Carrier Effect in Low Temperature Poly-Silicon p-Channel Thin Film Transistors", Solid State Phenomena, 93, 31, (2003)

Y. Uraoka, N. Hirai, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Analysis in Low-Temperature Poly-Si Thin Film Transistors Using Pico-Seconf Time-Resolved Emission Microscope", IEEE Elecron Device Letters, 24, No.4, 236, (2003)


2002

Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen", Jpn. J. Appl. Phys., 41, 3637, (2002)

Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin Film Transitors under Dynamic Stress", Jpn, J.Appl. Phys., 41, L13, (2002)

Y. Uraoka, Y. Morita, H. Yano, T. Hatayama, and T. Fuyuki, "Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystalline-Silicon P-Channel Thin Film Transistors", Jpn. J. Appl. Phys., 41, 5894, (2002)

Y. Uraoka, H. Yano, T. Hatayma, and T. Fuyuki, "Comprehensive Study on reliability of Low-Temperature Poly-Si Thin Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations", Jpn. J. Appl. Phys., 41, 2414, (2002)

T.Kawakita, H.Nakagawa, Y. Uraoka, and T. Fuyuki, "Reliability of Low Temperature Poly-Si GOLD(Gate-Overlapped LDD) Structure TFT", IEICE Trans Electron., E85-C, No.11, (2002)


2001

T. Fuyuki and Y. Uraoka , "Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Thin Film Transistors Toward High Reliability", Solid State Phenomena, 80-81, 349, (2001)

Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Reliability of Low Temperature-silicon TFTs under Inverter Operation", IEEE/Trans Electron Device Vol.48, No.10, pp.2370-2374, 2001

Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors", Jpn. J. Appl. Phys., 40, 2833, (2001)


2000

Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress", Jpn. J. Appl. Phys., 39, L1209, (2000)