NAIST Graduate School of Materials Science

Information Device Science Laboratory

Staff & Contact
Educational StaffProf. Yukiharu Uraoka
Associate Prof. Yasuaki Ishikawa
Assistant Prof. Mutsunori Uenuma ,Mami Fujii, Bermundo Juan Paolo Soria
ContactTEL: +81-743-72-6060
URLhttp://mswebs.naist.jp/LABs/uraoka/index.html

Many daily necessities around us such as TV sets, personal computers, and mobile phones, are composed of silicon-based semiconductor devices. The Information Device Science Laboratory is conducting research on the information function devices that can support the next-generation information society. Our research features the introduction of various new materials on silicon substrates, our own unique designs, and production of semiconductor devices that make the best use of their features. Thus, we are working on producing semiconductor devices with innovative functions on the basis of skilled manufacturing.

1. Next-generation high-tech information terminals

2. LSIs with new functions based on biological supramolecules

3. Printed/flexible displays using wide band gap materials

4. Printing technology for energy harvesting devices (solar cell, thermoelectric devices)

5. Emerging devices (Graphene transistors, power devices based on GaN)

  • Flexible Inorganic EL sheet
  • Green Laser Annealing
  • Bio-nano-materials for functional devices

1. M. Uenuma, B. Zheng, K. Kawano, M. Horita, Y. Ishikawa, I. Yamashita,and Y. Uraoka, “Guided Filament Formation in NiO-Resistive Random Access Memory by Embedding Gold Nanoparticles”, Appl. Phys. Lett. 100(8) 083105 (2012).

2. Y. Kawamura, M. Tani, N. Hattori, N. Miyatake, M. Horita, Y. Ishikawa, and Y. Uraoka, “Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition”, Jpn. J. Appl. Phys. 51 02BF04 (2012).

3. M. Fujii, Y. Ishikawa, M. Horita, and Y. Uraoka, “Unique Phenomenon in Degradation of Amorphous In2O3-Ga2O3-ZnO Thin-Film Transistors under Dynamic Stress”, Appl. Phys. Express 4 104103 (2011).

4. K. Ohara, B. Zheng, M. Uenuma, Y. Ishikawa, K. Shiba, I. Yamashita, and Y. Uraoka, “Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method”, Appl. Phys. Express 4 085004 (2011).

Courses

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