NAIST Division of Materials Science

Information Device Science Laboratory

Staff & Contact
Educational StaffProf. Yukiharu Uraoka
Associate Prof. Yasuaki Ishikawa
Assistant Prof. Mutsunori Uenuma , Mami Fujii, Bermundo Juan Paolo Soria, Mime Kobayashi
ContactTEL: +81-743-72-6060
URLhttp://mswebs.naist.jp/LABs/uraoka/index.html

Many daily necessities around us, such as TVs, computers, and mobile phones, are composed of silicon-based semiconductor devices. The Information Device Science Laboratory conducts research on information function devices that will support the next-generation information society. Key features of our research include the introduction of various new materials on silicon substrates, our own unique designs, and production of semiconductor devices that make the most effective use of their characteristics. Thus, we are working on producing semiconductor devices with innovative functions on the basis of skilled manufacturing.

1.  Next-generation high-tech information terminals

2.  LSIs with new functions based on biological supramolecules

3.  Printed/flexible displays using wide band gap materials

4.  Printing technology for energy harvesting devices (solar cell, thermoelectric devices)

5.  Emerging devices (Graphene transistors, power devices based on GaN)

  • Flexible Inorganic EL sheet
  • Green Laser Annealing
  • Bio-nano-materials for functional devices

1.  J. Bermundo, Y. Ishikawa, M. N. Fujii, H. Ikenoue, and Y. Uraoka, “H and Au diffusion in high mobility a-InGaZnO thin-film transistors vis low temperature KrF excimer laser annealing”, Applied Physics Letters 110, 133503 (2017).

2. Kahori Kise, M. Fujii, S. Urakawa, H. Yamazaki, E. Kawashima, S. Tomai, K. Yano, D. Wang, M. Furuta, Y. Ishikawa, Y. Uraoka, “Self-heating induced instability of oxide thin film transistors under dynamic stress”, Appl. Phys. Lett., 108, 02501 (2016).

3.  Mutsunori Uenuma, Yasuaki Ishikawa and Yukiharu Uraoka, “Joule heating effect in nonpolar and bipolar resistive random access memory”, Applied Physics Letters 107, 073503 (2015).

4.  Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Michel van der Zwan, Toshiaki Nonaka, Ryoichi Ishihara, Hiroshi Ikenoue, Yukiharu Uraoka, “Low Temperature Excimer Laser Annealing of a-InGaZnO Thin-Film Transistors Passivated by Organic Hybrid Passivation Layer, Applied Physics Letters, (2015).

5.  Takahiko Ban, Mutsunori Uenuma, Shinji Migita, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita and Yukiharu Uraoka, “Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate”, Applied Physics Letters, 106, 253104 (2015).

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