情報機能素子科学研究室のBermundo Juan Paolo Soria特任助教がIMID2017国際会議でOutstanding Poster Paper Awardを受賞
2017年8月28日 – 31日にBusanのBEXCOにて開催されたIMID2017 (The 17th International Meeting on Information Display) 国際会議において、情報機能素子科学研究室のBermundo Juan Paolo Soriaさん（特任助教）がOutstanding Poster Paper Awardを受賞しました。同賞は、Poster Sessionの発表者(473名)の中から最優秀発表者の20名に贈られるものです。
Analysis of the Significant Sheet Resistance Reduction of a-IGZO
after Excimer Laser Irradiation
Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue (Kyushu University), and Yukiharu Uraoka
I am honored to receive this prestigious award from IMID2017. This would not have been possible without the support and guidance of my colleagues, collaborators, and co-authors, so I am very much thankful to all of them. I will strive hard to continue our research on the improvement of oxide semiconductors for next-generation applications.
Besides high performance, transparency, and flexibility are properties required for ubiquitous devices with advanced functionalities. Amorphous oxide semiconductors such as a-IGZO fulfill the aforementioned requirements and have become popular channel materials in thin-film transistors (TFT). Nevertheless, to address issues such as parasitic capacitance and contact resistance in TFTs, current methods employ additional high temperature (>300 °C) and lengthy (>1 h) processes to increase the conductivity of a-IGZO. To realize future flexible and roll to roll applications, we performed a low temperature (<50 °C at the substrate) and instantaneous (<100 ns) method – excimer laser irradiation of a-IGZO to significantly increase its conductivity. We elucidated the improvement mechanism by analyzing the changes in optical properties, electrical properties, chemical composition, and chemical bonding. We found that the significant decrease in sheet resistance (increased conductivity) can be largely attributed to the substantial increase in oxygen vacancies in a-IGZO.