堀田昌宏
Masahiro Horita

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Assistant Professor
Information Device Science Laboratory
Graduate School of Materials Science
Nara Institute of Science and Technology
8916-5 Takayama, Ikoma, Nara 630-0192, JAPAN

Tel: +81-743-72-6063
Fax: +81-743-72-6069


略歴 - Biography

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2009.4		奈良先端科学技術大学院大学 物質創成科学研究科 助教
2009.3		博士(工学) (京都大学)
2009.3		京都大学 大学院 工学研究科 博士後期課程修了

論文 著書 - Publicaitons

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Masahiro Horita, Tsunenobu Kimoto, and Jun Suda, "Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11-20) and (1-100) Planes under Group-III-Rich Conditions", Applied Physics Express, 2, 091003, (2009)

Masahiro Horita, Tsunenobu Kimoto, and Jun Suda, "Surface Morphologies of 4H-SiC(11-20) and (1-100) Treated by High-Temperature Gas Etching", Japanese Journal of Applied Physics, 47, 8388, (2008)

Masahiro Horita, Tsunenobu Kimoto, and Jun Suda, "Nonpolar 4H-AlN Grown on 4H-SiC (1-100) with Reduced Stacking Fault Density Realized by Persistent Layer-by-Layer Growth", Applied Physics Letters, 93, 082106, (2008)

Masahiro Horita, Jun Suda, and T. Kimoto, "Reduction of Threading Dislocations in Nonpolar 4H-AlN on 4H-SiC (11-20) Grown by Molecular-beam Epitaxy with Slightly Al-rich Conditions", Phys. Stat. Sol. (c), 4, 2552, (2007)

Masahiro Horita, Jun Suda, and Tsunenobu Kimoto, "High-quality Nonpolar 4H-AlN Grown on 4H-SiC (11-20) Substrate by Molecular-beam Epitaxy", Applied Physics Letters, 89, 112117, (2006)

Masahiro Horita, Jun Suda, and T. Kimoto, "Impact of III/V Ratio on Polytype and Crystalline Quality of AlN Grown on 4H-SiC (11-20) Substrate by Molecular-beam Epitaxy", Phys. Stat. Sol. (c), 3, 1503, (2006)


専門 - Research areas

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半導体工学 - Semiconductor engineering
結晶工学 - Crystal engineering


学会活動 - Society activities

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応用物理学会 - The Japan Society of Applied Physics
結晶成長学会 - The Japanese Association for Crystal Growth