山﨑 はるか
Haruka Yamazaki

Ph.D. candidate, 3rd year
Information Device Science Laboratory
Graduate School of Materials Science
Nara Institute of Science and Technology
8916-5 Takayama, Ikoma, Nara 630-0192, JAPAN

Tel: +81-743-72-60064
Fax: +81-743-72-6069


Biography

2011 - present M. Eng. Graduate School of Materials Science, Nara Institute of Science and Technology, JAPAN
2007 - 2011 B. Eng. Department of Chemical Science and Engineering, Kobe University, JAPAN


Honors and Awards


Publications

Presented Works

International conferences
H. Yamazaki
, M. Fujii, Y.Ueoka, Y.Ishikawa,M. Fujiwara, E. Takahashi and Y. Uraoka, "High reliability a-InGaZnO thin film transistors with low- H2 SiNx gate insulators", The 8th International Thin-Film Transistor Conference (ITC2012), Lisbon, Portugal, January, (2012)

H. Yamazaki, M. Fujii, Y.Ueoka, Y.Ishikawa,M. Fujiwara, E. Takahashi and Y. Uraoka, "Highly reliable a-InGaZnO thin film transistors with new SiNx gate insulators", The 2012 International Meeting for Future of Electron Devices Kansai (IMFEDK2012), Kansai University Centenary Memorial Hall, Osaka, Japan, May, (2012)

国内学会 (Japanese)
山﨑 はるか, 藤井 茉美, 上岡 義弘、石河 泰明、藤原 将喜、高橋 英治、 浦岡 行治、 "アモルファスInGaZnO薄膜トランジスタにおけるゲート絶縁膜中水素量が信頼性に与える影響", 第59回応用物理学関係連合講演会, 早稲田大学, 3月, (2012)


Research Interests

半導体工学 -Semiconductor Engineering-


Activities

応用物理学会 -The Japan Society of Applied Physics (JSAP)-