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Assistant Professor Bermundo Paolo Juan of Information Device Science Laboratory Received ECS Young Researcher Award at AMFPD22 International Conference

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Assistant Professor Bermundo Paolo Juan of the Information Function Element Science Laboratory received the ECS Young Researcher Award at the AMFPD International Conference held from July 5th to 8th, 2022. The award was given to one excellent presenter from about 50 oral lectures and posters.

High-k Solution Processed Hybrid Gate Insulators for Amorphous Oxide Thin-Film Transistors and its Temperature and Thickness Dependence

Bermundo Paolo Juan

I am greatly thankful to my colleagues, collaborators, and Prof. Uraoka for their invaluable help and support in this research. In particular, I wish to thank Ms. Kesorn and Dr. Yoshida for their excellent contributions in this study. I will continue to do my best to contribute to the realization of sustainable flexible electronics.


Next generation devices require high performance and low power consumption which necessitates the development of alternative gate insulating materials with high dielectric constant (k). We developed a high-k hybrid gate insulating material by combining high-k BaTiOx nanoparticles with a low-k polysiloxane polymer matrix. The combination not only lowers the process temperature to 300 ◦C from 650 ◦C but also maintains the high-k property of the solution processed nanocomposite film. This high-k hybrid material enables oxide thin-film transistors with mobilities of up to 30 cm^2 V-1s−1, low turn-on voltage of <0.5 V, and minimal off current of ∼10^−12 A which makes it promising for high performance flexible electronics.


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