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Ms. Aimi Syairah (a D3 student) of Information Device Science Laboratory got the Outstanding Student Award at IEEE IMFEDK International Conference.

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IMFEDK (The 2021 International Meeting for the Future of Electron Device, Kansai), organized by IEEE (The Institute of Electrical and Electronics Engineers), is an international conference on next-generation semiconductor devices. The IMFEDK (The 2021 International Meeting for Future of Electron Device, Kansai) is an international conference on next generation semiconductor devices. This year's conference was held online on 18-19 November 2021. The award was given to 3 students from 30 presentations.

"Solution-processed Barium Titanate/Polysiloxane Polymer Thin Film for Memory Application"

Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Mutsunori Uenuma, Atsuko Yamamoto, and Yukiharu Uraoka



I am deeply grateful to my professors for their invaluable guidance and advice and to my co-authors and all the people involved for their support in many fields. I will continue to contribute to the development of research on thin-film semiconductor devices.


Conventional white powder barium titanate (BaTiO3 / BTO), in its tetragonal crystalline form, has ferroelectric properties, exhibits a large memory window and high program/erase speed, and provides excellent memory functionality at low operating voltages. However, BTO nanoparticles are almost brittle, especially at large nanoparticle sizes, which affects their dielectric properties. To address this issue, an inorganic-organic polysiloxane (PSX) polymer has been introduced to lower the processing temperature while maintaining excellent memory properties. Compared to other nanocomposite materials, the newly investigated BTOPSX nanocomposite exhibits greater hysteresis properties at lower applied voltages and maintains lower fabrication temperatures applicable to high performance memory devices with complex 3D stacked structures where process temperatures are limited.


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