Division of Materials Science, NAIST

Mr. Christian Mark Pelicano ( 3rd year doctoral course student of Quantum Materials Science Laboratory) wins Best Presenter Award in 1st ICMSEP Conference

Mr. Christian Mark Pelicano, a D3 student from Quantum Materials Science Laboratory, was awarded as the Best Presenter in the GREENPower, Materials for Energy, and Advanced Ceramics session of the 1st International Conference on Materials Science and Engineering in the Philippines held at The Lake Hotel, Tagaytay, Philippines on October 25-26, 2018. The two-day conference was organized in 6 parallel sessions with 48 student presentations. Best Presenter Awards are given for each session.

Enhanced Charged Transport in Al-Doped ZnO Nanotubes Designed Via AlCl3 Doping and Synchronous Etching of H2O-Oxidized ZnO Nanorods for Perovskite Solar Cells

Christian Mark Pelicano and Hisao Yanagi

I would like to thank my thesis adviser, Prof. Hisao Yanagi for his unending support and guidance as well as for giving me an opportunity to work on this topic. I would also like to express my gratitude to NAIST for the experimental and financial assistance in attending this conference.

Highly efficient PSCs usually employ an electron-transporting layer (ETL) such as TiO2, SnO2 and ZnO. Among these metal oxides, ZnO is particularly promising owing to its high electron mobility and low temperature processability. Control over charge carrier transport is also of key importance to realize highly efficient PSCs and low content doping of metal oxides has been considered as a way of improving this property of ETLs. In our previous work, we presented a novel route of designing various nanostructured ZnO films via a strategic low-temperature H2O oxidation and their application as ETL for PSCs. This presentation demonstrated a novel approach to generate Al-doped ZnO nanotubes (AZO NTs) via one-step AlCl3 etching and doping of H2O-oxidized ZnO nanorods (NRs). Our results not only demonstrate the promising potential of AZO NTs for photovoltaic applications, but also offer significant insights into their design and utilization for next-generation optoelectronic devices.


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