Mark D. Ilasin, Doctoral Student in the Information Device Science Laboratory, Received the “Best Oral Presentation Award” at ISAT-24
Summary
The 24th International Symposium on Advanced Technology (ISAT-24) was held on November 22th to 23th at Kogakuin University of Technology and Engineering, Hachioji Campus, Tokyo, Japan. Mark D. Ilasin, a doctoral student in the Information Device Science Laboratory, received the “Best Oral Presentation Award”.
ISAT-24 focused on innovations in engineering aimed at building a sustainable and inclusive future. The symposium also serves as a platform for academic exchange and collaboration across diverse fields of science and engineering.
Presentation title
Advancing argon plasma treatment towards sustainable fabrication of rare-metal-free amorphous oxide source-gated transistors
Authors
Mark D. Ilasin, Juan Paolo S. Bermundo, Pongsakorn Sihapitak, Candell Grace P. Quino,
Bryndell J. Alcantara, Magdaleno R. Vasquez, Jr., Senku Tanaka, Hidenori Kawanishi,
Kosuke O. Hara, and Yukiharu Uraoka
Research detail
In this study, solution-processed rare-metal-free oxide thin films were employed to fabricate source-gated transistors using argon plasma. Instead of relying on specialized Schottky source metals, the plasma treatment redefined the semiconductor–metal interface, enabling the use of standard ohmic electrodes. The compatibility of plasma-based tuning using various plasma sources makes it promising for future large-area, low-power electronic systems. Beyond achieving low-voltage transistor operation, this approach highlights a sustainable and equipment-efficient pathway for device engineering.
Comment
I am beyond grateful to receive this recognition. This award means a great deal to me and to everyone who has supported our work on plasma-assisted oxide semiconductor devices. I would also like to express my sincerest gratitude to Associate Professor Juan Paolo S. Bermundo and Professor Yukiharu Uraoka of NAIST, as well as Associate Professor Magdaleno R. Vasquez Jr. of the University of the Philippines, for their invaluable guidance throughout this research.
I also want to thank my co-authors, our lab members, and the staff of the Information Device Science Laboratory for their help and encouragement. This recognition motivates me to keep pushing forward in developing sustainable materials and processes for thin-film and source-gated transistors, especially for future low- and ultra-low power electronic applications.