Mark D. Ilasin, Doctoral Student in the Information Device Science Laboratory, Receives “The 59th JSAP Young Scientist Presentation Award”

Summary

Mark D. Ilasin (Doctoral Student, Information Device Science Laboratory) received the 59th JSAP Young Scientist Presentation Award at the 2025 Autumn Meeting of the Japan Society of Applied Physics (JSAP) (September 7–10, 2025).

The award was conferred at the 73rd JSAP Spring Meeting, where he also delivered an award lecture in recognition of this achievement.

Presentation title

Rare-Metal-Free Solution Processed Source-Gated Transistors via Argon Plasma-Induced Contact Optimization

Authors

Mark D. Ilasin (NAIST), Juan Paolo S. Bermundo (NAIST), Pongsakorn Sihapitak (NAIST), Candell Grace P. Quino (NAIST), Magdaleno R. Vasquez, Jr. (UP Diliman), Senku Tanaka (Kindai Univ.), Hidenori Kawanishi (NAIST), and Yukiharu Uraoka (NAIST)

Research detail

This presentation introduced a novel structure and method for producing alternative and effective source-gated transistors (SGTs). This was achieved by selectively tuning the semiconductor channel beneath the source region through argon (Ar) plasma treatment. The Ar plasma treatment modifies the channel’s Fermi energy, hence altering the semiconductor’s work function to create an appropriate Schottky barrier at the metal-semiconductor interface. This approach eliminates the requirement for replacing ohmic source electrodes with specialized Schottky source electrodes used in conventional SGTs.

Comment

Receiving this award means a lot to me, especially having had the chance to share our recent work on plasma-assisted oxide semiconductor devices at the JSAP meeting.
I’m also very grateful to Associate Professor Juan Paolo S. Bermundo (NAIST), Professor Magdaleno R. Vasquez Jr. (UP Diliman), and Professor Yukiharu Uraoka (NAIST) for their constant guidance and support throughout this work. I also want to express my sincerest gratitude to my co-authors, lab mates, and the Information Device Science Laboratory staff for their unending support and encouragement.
This experience inspires me more to continue contributing to the development of sustainable materials and device processes for next-generation low-power electronic applications.