奈良先端科学技術大学院大学 物質創成科学領域

Division of Materials Science NARA Institute of Science and Technology

Mark D. Ilasin of the Thin Film Semiconductor Devices Laboratory Receives the IEEE EDS Kansai Chapter MFSK Award

Summary

Mark D. Ilasin, a PhD graduate of the Thin Film Semiconductor Devices Laboratory, received the ‘IEEE EDS Kansai Chapter MFSK Award’ at the Kansai Colloquium Electron Devices Workshop held on September 17, 2026. This annual award is conferred by the IEEE Electron Devices Society (EDS) Kansai Chapter to recognize outstanding research papers in electron device physics and semiconductor engineering authored by researchers based within the Kansai region. Eligible works are evaluated comprehensively from a pool of outstanding international conference proceedings and peer-reviewed journal publications. The study was selected for the distinction based on its technical impact, structural completeness, and successful workshop presentation.

Presentation title

Fermi Energy Tuning of Solution-Processed Rare-Metal-Free Amorphous Oxide Source-Gated Transistors via Argon Plasma

Authors

Mark D. Ilasin, Juan Paolo S. Bermundo, Pongsakorn Sihapitak, Candell Grace P. Quino, Senku Tanaka (Kindai Univ.), Hidenori Kawanishi, and Yukiharu Uraoka

Research detail

This research presents a methodology for modifying the Fermi energy level of amorphous oxide transistors by applying an argon plasma treatment to alter the work function of the semiconductor channel region beneath the source electrode. This creates a Schottky barrier at the metal-semiconductor junction, eliminating the need for specialized high work function metal electrodes used in conventional source-gated transistors. This simplified fabrication process enables the development of low-power, sustainable electronics, such as energy-efficient devices.

Comment

Receiving the MFSK Award from the IEEE EDS Kansai Chapter is a great honor and a deeply rewarding milestone. Presenting our findings on plasma-assisted oxide semiconductor devices at the Kansai Colloquium provided insightful feedback and technical discussions that will greatly guide our ongoing research.

I would like to express my sincere gratitude to Associate Professor Juan Paolo S. Bermundo, Professor Yukiharu Uraoka, and our co-authors for their invaluable guidance and mentorship throughout this project. This recognition strongly motivates us to continue advancing research on sustainable materials and processing technologies for next-generation electronic applications.