Information Device Science Laboratory

2021
1	JPS Bermundo, P Kesorn, N Yoshida, AS Safaruddin, Y Uraoka, "Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors", J. Phys. D: Appl. Phys. 55, 075102 (2021)
2	J. C. Felizco, M. Uenuma M. N Fujii, Y.Uraoka, "Improved Thermoelectric Power Factor of InGaZnO/SiO₂ Thin Film Transistor via Gate-Tunable Energy Filtering", IEEE Electron Device Letters, 42, 1236-1239 (2021)
3	N Sasaki, M Arif, Y Uraoka, J Gotoh, S Sugimoto, "Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO 2", Journal of Electronic Materials, 50,2974-2980.(2021)
4	T Ishibe, A Tomeda, Y Komatsubara, R Kitaura, M Uenuma, Y Uraoka, "Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator", Applied Physics Letters, 118,151601 (2021)
5	DC Nguyen, Y Ishikawa, Y Uraoka, "Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells", Progress in Photovoltaics: Research and Applications, 29,423-432 (2021)

2020
1	Nobuo Sasaki, Muhammad Arif, Yukiharu Uraoka, Jun Gotoh and Shigeto Sugimoto, "Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator", Crystals 10, 405 (2020)
2	J. P. S Bermundo, C. Kulchaisit, Y. Ishikawa, M. N. Fujii, H. Ikenoue, and Y. Uraoka, "Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors", J. Phys. D: Appl. Phys. 53, 045102-1~7 (2020)
3	M.Furukawa, M. Uenuma, Y.Ishikawa, "Evaluate Fixed Charge and Oxide-Trapped Charge on SiO2/GaN Metal-Oxide-Semiconductor Structure Before and After Postannealing", Physica Status Solidi B, 2020, 1900444 (2020)
4	P. Kesorn, J. P. Bermundo, T. Nonaka, M. N. Fujii, Y. Ishikawa, Y. Uraoka, "High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator", ECS J Solid State Sci Technol, 9, 025002 (2020)
5	D. C Corsino, J. P. Bermundo, M. N Fujii, K. Takahashi, Y.Ishikawa, Y.Uraoka, "Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200 °C", J. Phys. D: Appl. Phys., 53, 165103 (2020)
6	D. C. Nguyen, Y. Ishikawa, S. Jonai, K. Nakamura, A. Masuda, Y.Uraoka, "Elucidating the mechanism of potential induced degradation delay effect by ultraviolet light irradiation for p-type crystalline silicon solar cells", Solar Energy, 199,55-62.(2020)
7	J. C. Felizco, M.Uenuma, Y.Ishikawa, "Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation", Applied Surface Science, 527,146791 (2020)
8	Yuki Hashima, Takanori Takahashi, Yasuaki Ishikawa, and Yukiharu Uraoka, "Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor", ACS Appl. Electron. Mater, 2,405-408 (2020)
9	Muhammad Arif, Nobuo Sasaki, Yasuaki Ishikawa, and Yukiharu Uraoka, "Extension of the {100}-Oriented Grain-Boundary Free Si Thin Film Grown by a Continuous-Wave Laser Lateral Crystallization", Thin Solid Films, Volume, 708,31(2020)
10	Takahashi Takanori, Mami N. Fujii, Ryoko Miyanaga, Miki Miyanaga, Yasuaki Ishikawa, and Yukiharu Uraoka, "Unique degradation under AC stress in high-mobility amorphous In-W-Zn-O thin-film transitors", Applied Physics Express , 13,054003 (2020)
11	Aimi Syairah Safaruddin, Juan Paolo Soria Bermundo, Naofumi Yoshida, Toshiaki Nonaka, Mami N. Fujii, Yasuaki Ishikawa, and Yukiharu Uraoka, "Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Tempearture Photosensitive Passivation", IEEE Electron Device Letters , 41,1372, (2020)
12	Dianne C. Corsino, Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Maimi N. Fujii, Yasuaki Ishikawa, Hiroshi Ikenoue, and Yukiharu Uraoka, "high-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO", ACS Appl. Electron. Mater. , 41,2398-2407. (2020)
13	Jenichi Felizco, Taneli Juntunen, Mustunori Uenuma, Jarkko Etula, Camilla Tossi, Yasuaki Ishikawa, Ikka Tittonen, and Yukiharu Uraoka, "Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films", ACS Appl. Mater. Interfaces, 43,49210-49218 (2020)

2019
1	A. S. Safaruddin, J. P. S. Bermundo, N. Yoshida, T. Nonaka, M. N. Fujii, Y. Ishikawa, and Y. Uraoka, "Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors", Appl. Phys. Express 12, 064002-1~5 (2019)
2	T. Takahashi, R. Miyanaga, M. N. Fujii, J. Tanaka, K. Takechi, H. Tanabe, J. P. Bermundo, Y. Ishikawa, and Y. Uraoka, "Hot carrier effects in InGaZnO thin-film transistor", Appl. Phys. Express 12, 094007-1~4 (2019)
3	T. Lin, M. Uenuma, M. Fururkawa, J. P. Bermundo, Y. Ishikawa, and Y. Uraoka, "Effective Trapping Reduction in SiO2/GaN MOS Structure by High PressureWater Vapor Annealing", ECS J Solid State Sci Technol 8, 388-391 (2019)
4	P. Kesorn, J. P. Bermundo, T. Nonaka, M. N. Fujii, Y. Ishikawa, and Y. Uraoka, "High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator", ECS J Solid State Sci Technol 9, 025002-1~5 (2020)
5	M. A. Islam, D. C. Nguyen, and Y. Ishikawa, "Effective minority carrier lifetime as an indicator for potential-induced degradation in p-type single-crystalline silicon photovoltaic modules", Jpn. J. Appl. Phys. 58 106507-1~10 (2019)
6	M. A. Islam, H. Matsuzaki, Y. Okabayashi, and Y. Ishikawa, "Transient carrier recombination dynamics in potential‐induced degradation p‐type single‐crystalline Si photovoltaic modules", Prog Photovolt 27, 682–692 (2019)
7	X. Wang, Y. Ishikawa, S. Araki, M. Uenuma, and Y. Uraoka, "Removing process of the three-dimension periodic nanostructure fabricated from KMPR photoresist", Jpn. J. Appl. Phys. 58, SSDDF08-1~7 (2019)
8	Y. Uraoka, J. P. Bermundo, M. N. Fujii, M. Uenuma, and Y. Ishikawa, "Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression", Jpn. J. Appl. Phys. 58, 090502-1~10 (2019)
9	M. Furukawa, M. Uenuma, Y. Ishikawa, and Y. Uraoka, "Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO2/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing ", Phys. Status Solidi B 2019, 1900444-1~6 (2019)
10	I. Raifuku, Y. Ishikawa, Y. H. Chiang, P. Y. Lin, M. H. Li, Y. Uraoka, and P. Chen, "Segregation-free bromine-doped perovskite solar cells for IoT applications", RSC Adv. 9, 32833-32838 (2019)
11	M. Uenuma, R. Ando, M. Furukawa, and Y. Uraoka, "The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface", Phys. Status Solidi B 2019, 1900368-1~6 (2019)
12	Nobuo Sasaki, Muhammad Arif, and Yukiharu Uraoka, "Transition mechanism of the thin Si -films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} orientd crystal to the twinned {211} crystal depending on the laser power", Jpn. J. Appl. Phys 58, SBBJ02 (2019)
13	Nobuo Sasaki, Muhammad Arif, and Yukiharu Uraoka, "Effect of surface tension on crystal growth of Si thin films by a continuous-wave laser lateral crystallization", Appl. Phys. Express 12, 055508 (2019)

2018
1	Z. Song, T. Bourgeteau, I. Raifuku, Y. Bonnasieux, E. Johnson, Y. Ishikawa, M. Foldyna, P. R. i Cabarrocas, and Y. Uraoka, "Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature", Thin Solid Films 646, 209-215 (2018)
2	S. Uchiyama, Yasuaki Ishikawa, and Yukiharu Uraoka, "Effect of inversion layer at iron pyrite surface on photovoltaic device", Jpn. J. of Appl. Phys. 57, 032301-1~7 (2018)
3	T. Takahashi, T. Hoga, R. Miyanaga, K. Oikawa, M. N. Fujii, Y. Ishikawa, Y. Uraoka, and K. Uchiyama, "Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2O6 as Gate Insulator Deposited by Sputtering Method", Phys. Status Solidi A 2018, 1700773-1~5 (2018)
4	N. Yoshida, J. P. Bermundo, Y. Ishikawa, T. Nonaka, K. Taniguchi, and Y. Uraoka, "Fluorine incorporation in solutionprocessed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors", J. Phys. D: Appl. Phys. 51, 125105 (2018)

2017

1	K. Nabesaka, Y. Ishikawa, Y. Hosokawa, and Y. Uraoka, "Photomechanical modification of ZnS microcrystal to enhance electroluminescence by ultrashort-pulse laser processing", Appl. Phys. Exp. 10, 21201-1~4 (2017)
2	S. Yoshinaga, Y. Ishikawa, S. Araki, T. Honda, Y. Jiang, and Y. Uraoka, "Numerical analysis of monocrystalline silicon solar cells with fine nanoimprinted textured surface", Jpn. J. of Appl. Phys. 56, 022301-1~7 (2017)
3	T. Ban, S. Migita, M. Uenuma, N. Okamoto, Y. Ishikawa, Y. Uraoka, I. Yamashita, and S. Yamamoto, "Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate", Jpn. J. of Appl. Phys. 56, 03BB05-1~6 (2017)
4	J. P. Bermundo, Y. Ishikawa, M. N. Fujii, H. Ikenoue, and Y. Uraoka, "H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperatureKrF excimer laser annealing", Appl. Phys. Lett. 107, 33504-1~4 (2017)
5	S. Yoshinaga, Y. Ishikawa, and Y. Uraoka, "Low surface reflectance by nanoimprinted texture with siicon-rich silicon nitride layer", J. Phys. D: Appl. Phys. 50, 455108-1~7 (2017)
6	N. Sasaki, Y. Nieda, D. Hishitani, and Y. Uraoka, "Power dependence of orientation in low-temperature poly-Si lateral grains crystallized by a continuous-wave laser scan", Thin solid films 631, 112-117 (2017)
7	D. Hishitani, M. Horita, Y. Ishikawa, H. Ikenoue, and Y. Uraoka, "Solution-derived SiO₂ gate insulator formed by CO₂ laser annealing for polycrystalline silicon thin-film transistors", Jpn. J. of Appl. Phys. 56, 56503-1~5 (2017)
8	T. Ban, M. Uenuma, S. Migita, N. Okamoto, Y. Ishikawa, Y. Uraoka, I. Yamashita, and S. Yamamoto, "One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins", Jpn. J. of Appl. Phys. 56, 06GG11-1~6 (2017)
9	S. Araki, Y. Ishikawa, X. Wang, M. Uenuma, D. Cho, and S. Jeon, "Fabrication of Nanoshell-based 3D Periodic Structures by Templating process using Solution-derived ZnO", Nanoscale Res. Lett. 12, 419-1~9 (2017)
10	J. C. Felizco, M. Uenuma, D. Senaha, Y. Ishikawa, and Y. Uraoka, "Growth of InGaZnO nanowires via a Mo/Au catalyst from amorphous thin film", Appl. Phys. Lett. 111, 033104-1~4 (2017)
11	I. Raifuku, Y. Ishikawa, T. Bourgeteau, Y. Bonnassieux, P. R. i Cabarrocas, and Y. Uraoka, "Fabrication of Perovskite Solar Cells using Sputter-processed CH₃NH₃PbI₃ Films", APEX 10, 94101-1~3 (2017)
12	S. Mayumi, Y. Ikeguchi, D. Nakane, Y. Ishikawa, Y. Uraoka, and M. Ikeguchi, "Effect of Gold Nanoparticle Distribution in TiO₂ on the Optical and Electrical Characteristics of Dye-Sensitized Solar Cells", Nanoscale Res. Lett. 12, 513-1~12 (2017)
13	I. Inoue, Y. Umemura, I. Raifuku, K. Toyoda, Y. Ishikawa, S. Ito, H. Yasueda, Y. Uraoka, and I. Yamashita, "Biotemplated Synthesis of TiO2-Coated Gold Nanowire for Perovskite Solar Cells", ACS OMEGA 2, 5478-5485 (2017)
14	M. Ochi, A. Hino, H. Goto, K. Hayashi, M. N. Fujii, Y. Uraoka, and T. Kugimiya, "Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin", Jpn. J. of Appl. Phys. 57, 02CB06-1~7 (2017)

2016

1	Y. Fujimoto, M. Uenuma, Y. Ishikawa, and Y. Uraoka, "Improvement of Thermoelectric Properties of a-InGaZnO ThinFilm by Optimizing Carrier Concentration", J. Elec. Mat. 45, 1377-1381 (2016)
2	K. Kise, M. N. Fujii, S. Urakawa, H. Yamazaki, E. Kawashima, S. Tomai, K. Yano, D. Wang, M. Furuta, Y. Ishikawa, and Y. Uraoka, "Self-heating induced instability of oxide thin film transistors under dynamic stress", Appl. Phys. Lett. 108, 23501 (2016)
3	K. Kishimoto, Y. Nose, Y. Ishikawa, Mami N. Fujii, and Y. Uraoka, "Reactivity and stability of thallium oxide for fabricating TlSnZnO toward thin-film transistors with high mobility", Jalcom 672, 413-418 (2016)
4	H. Yamazaki, Y. Ishikawa, Mami N. Fujii, J. P. Bermundo, E. Takahashi, Y. Andoh, and Y. Uraoka, "Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors Dielectric Science and Materials", ECS JSS 5, N17-N21 (2016)
5	I. Inoue, Y. Ishikawa, Y. Uraoka, I. Yamashita, and H. Yasueda, "Selection of a novel peptide aptamer with high affinity for TiO₂-nanoparticle through a direct electroporation with TiO₂-binding phage complexes", J. Biosci. Bioeng. 122, 528-532 (2016)
6	C. Kulchaisit, Y. Ishikawa, M. N. Fujii, H. Yamazaki, J. P. Soria Bermundo, S. Ishikawa, T. Miyasako, H. Katsui, K. Tanaka, K. Hamada, M. Horita, and Y. Uraoka, "Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation", J. Display. Technol. 12, 263-267 (2016)
7	H. Kanda, A. Uzum, N. Harano, S. Yoshinaga, Y. Ishikawa, Y. Uraoka, H. Fukui, T. Harada, and S. Ito, "Al₂O₃/TiO₂ double layer anti-reflection coating film for crystalline silicon solar cells formed by spray pyrolysis", Energy Sci. and Eng. 4, 269-276 (2016)
8	M. N. Fujii, Y. Ishikawa, R. Ishihara, J. Cingel, M. R. T. Mofrad, J. P. Bermundo, E. Kawashima, K. Tomai, K. Yano, and Y. Uraoka, "Nano-crystallization in ZnO-doped In₂O₃ thin films via excimer laser annealing for thin-film transistors", AIP Adv. 6, 65216-1~10 (2016)
9	I. Raifuku, Y. Ishikawa, S. Ito, and Y. Uraoka, "Characteristics of Perovskite Solar Cells under Low-Illuminance Conditions", J. Phys. Chem. C 120, 18986-18990 (2016)
10	M. A. Khan, P. Sichanugrist, S. Kato, and Y. Ishikawa, "Theoretical investigation about the optical characterization of cone-shaped pin-Si nanowire for top cell application", Energy Sci. and Eng. 4, 383-393 (2016)
11	H. Kanda, A. Uzum, H. Nishino, T. Umeyama, H. Imahori, Y. Ishikawa, Y. Uraoka, and S. Ito, "Interface Optoelectronics Engineering for Mechanically Stacked Tandem Solar Cells Based on Perovskite and Silicon", ACS Appl. Mater. Interfaces 8, 33553-33561 (2016)

2015

1	K. Yoshitsugu, M. Horita, Y. Ishikawa, and Y. uraoka, "Leakage Current Reduction in ALD-Al₂O₃ Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing", ECS Transactions 67 (1), 205-210 (2015)
2	H. Kamitake, M. Uenuma, N. Okamoto, M. Horita, Y. Ishikawa, I. Yamashita, and Y. Uraoka, "Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides", Nanotechnology 26, 195201-1~10 (2015)
3	Y. Mulyana, M. Uenuma, N. Okamoto, Y. Ishikawa, I. Yamashita, and Y. Uraoka, "Creating Reversible p竏地 Junction on Graphene through Ferritin Adsorption", ACS Appl. Mater. Interfaces 8, 8192竏鈀8200 (2015)
4	Y. Fujimoto, M. Uenuma, Y. Ishikawa, and Y. Uraoka, "Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration", AIP Advances 5, 97209 (2015)
5	T. Ban, M. Uenuma, S. Migita, N. Okamoto, Y. Ishikawa, I. Yamashita, and Y. Uraoka, "Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate", Appl. Phys. Lett. 106, 253104 (2015)
6	I. Inoue, H. Yamauchi, N. Okamoto, K. Toyoda, M. Horita, Y. Ishikawa, H. Yasueda, Y. Uraoka, and I. Yamashita, "Thermo-stable carbon nanotube-TiO₂ nanocompsite as electron highways in dyesensitized solar cell produced by bio-nanoprocess", Nanotechnology 26, 285601-1~8 (2015)
7	J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara, "Current Collapse Reduction in AlGaN/GaN HEMTs by High Pressure Water Vapor Annealing ", IEEE Trans. Elec. Dev. 62, 2423-2428 (2015)
8	J. P. Bermundo, Y. Ishikawa, H. Yamazaki, T. Nonaka, M. N. Fujii, and Y. Uraoka, "Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors", Appl. Phys. Lett. 107, 033504-1~5 (2015)
9	M. Uenuma, Y. Ishikawa, and Y. Uraoka, "Joule heating effect in nonpolar and bipolar resistive random access memory", Appl. Phys. Lett. 107, 073503-1~4 (2015)
10	K. Kishimoto, D.-H. Lee, I. Kang, C.-O. Jeong, Y. Ishikawa, and H.-S. Kong, "High-mobility material research for thin-film transistor with amorphous thallium窶奴inc窶鍍in oxide semiconductor", Jpn. J. of Appl. Phys. 54, 104101-1~5 (2015)
11	J. Tanaka, Y. Ueoka, K. Yoshitsugu, M. Fujii, Y. Ishikawa, Y. Uraoka, K. Takechi, and H. Tanabe, "Comparison between Effects of PECVD-SiOx and Thermal ALD-AlOx Passivation Layers on Characteristics of Amorphous InGaZnO TFTs", ECS J. Solid State Sci. Technol. 4 (7), Q61-Q65 (2015)
12	M. Ajmal Khan, Y. Ishikawa, I. Kita, K. Fukunaga, T. Fuyuki, and M. Konagai, "Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour窶斗iquid窶都olid mode for nanoscale device applications", J. Mater. Chem. C 3, 11577-11580 (2015)
13	M. Ajmal Khan, Y. Ishikawa, I. Kita, A. Tani, H. Yano, T. Fuyuki, and M. Konagai, "Investigation of crystallinity and planar defects in the Si nanowires grown by vapor窶斗iquid窶都olid mode using indium catalyst for solar cell applications", Jpn. J. of Appl. Phys. 55, 01AE03-1~6 (2015)
14	M. N. Fujii, Y. Ishikawa, K. Miwa, H. Okada, Y. Uraoka, and S. Ono, "High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric", Sci. Rep. 5, 18168-1~6 (2015)
15	J. P. Bermundo, Y. Ishikawa, M. N. Fujii, T. Nonaka, R. Ishihara, H. Ikenoue, and Y. Uraoka, "Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers", J. Phys. D: Appl. Phys. 49, 35102-1~7 (2015)

2014

1	Y. Ueoka, Y. Ishikawa, J. P. Bermundo, H. Yamazaki, S. Urakawa, M. Fujii, M. Horita, and Y. Uraoka, "Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress", ECS J. Sol. Stat. Sci. & Tech. 3, Q3001, (2014)
2	Mami N. Fujii, Y. Ishikawa, M. Horita, and Y. Uraoka, "Vapor-Induced Improvement in Field Effect Mobility of Transparent a-IGZO TFTs", ECS J. Sol. Stat. Sci. & Tech. 3, Q3050, (2014)
3	I. Inoue, K. Watanabe, H. Yamauchi, Y. Ishikawa, H. Yasueda, Y. Uraoka, and I. Yamashita, "Biological Construction of Single-Walled Carbon Nanotube Electron Transfer Pathways in Dye-Sensitized Solar Cells", ChemSusChem 7, 2805, (2014)
4	K. Kado, M. Uenuma, K. Sharma, H. Yamazaki, S. Urakawa, Y. Ishikawa, and Y. Uraoka, "Thermal Analysis for Observing Conductive Filaments in Amorphous InGaZnO Thin Film Resistive Switching Memory", Appl. Phys. Lett. 105, 123506, (2014)
5	S. Mayumi, Y. Ikeguchi, D. Nakane, Y. Ishikawa, Y. Uraoka, and M. Ikeguchi, "Highly Stable Dye-Sensitized Solar Cells with Quasi-Solid-State Electrolyte Based on Flemion", Sol. Energy 110, 648, (2014)
6	C. He, M. Uenuma, N. Okamoto, H. Kamitake, Y. Ishikawa, I. Yamashita, and Y. Uraoka, "A Distance-Controlled Nanoparticle Array Using PEGylated Ferritin", Mater. Res. Exp. 1, 45410, (2014)
7	A. Uzum, K. Fukatsu, H. Kanda, Y. Kimura, K. Tanimoto, S. Yoshinaga, Y. Jiang, Y. Ishikawa, Y. Uraoka, and S. Ito, "Silica-Sol-Based Spin-Coating Barrier Layer Against Phosphorous Diffusion for Crystalline Silicon Solar Cells", Nanoscale Res. Lett. 9, 659, (2014)a
8	M. Horita, M. Noborio, T. Kimoto, and J. Suda, "4H-SiC MISFETs with 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11-20)", Electron Dev. Lett. 35, 339-341 (2014)
9	Y. Ueoka, Y. Ishikawa, J. P. Bermundo, H. Yamazaki, S. Urakawa, Y. Osada, M. Horita, and Y. Uraoka, "Effect of Contact Material on Amorphous InGaZnO Thin-Film Transistor Characteristics", Jpn. J. of Appl. Phys. 53, 03CC04-1~5 (2014)
10	Y. Ueoka, T. Nishibayashi, Y. Ishikawa, H. Yamazaki, Y. Osada, H. Yamazaki, M. Horita, and Y. Uraoka, "Analysis of Printed Silver Electrode on Amorphous Indium Gallium Zinc Oxide", Jpn. J. of Appl. Phys. 53, 04EB03-1~5 (2014)
11	Y. Mulyana, M. Uenuma, Y. Ishikawa, and Y. Uraoka, "Reversible Oxidation of Graphene through Ultraviolet/OzoneTreatment and Its Nonthermal Reduction through Ultraviolet Irradiation", J. Phys. Chem. C 118, 27372-27381 (2014)

2013

1	Y. Tojo, A. Miura, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization", Thin Solid Films 540, pp 266窶錀270 (2013)
2	M. Uenuma, T. Ban, N. Okamoto, B. Zheng, Y. Kakihara, M. Horita, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Memristive nanoparticles formed using a biotemplate", RSC Adv. 3, pp 18044窶錀18048 (2013)
3	K. Yoshitsugu, M. Horita, Y. Ishikawa and Y. Uraoka, "Characterizations of Al₂O₃ gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition ", Phys. Status Solidi C 10, pp 1426窶錀1429 (2013)
4	S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa and Y. Uraoka, "Thermal distribution in amorphous InSnZnO thin-film transistor ", Phys. Status Solidi C 11, pp 1561窶錀1564 (2013)
5	S. Saijo, Y. Ishikawa, B. Zheng, N. Okamoto, I. Yamashita and Y. Uraoka, "Plasmon Absorbance of SiO₂-Wrapped Gold Nanoparticles Selectively Coupled with Ti Substrate Using Porter Protein ", Jpn. J. Appl. Phys. 52, 125201 (2013)
6	J. P. Bermundo, Y. Ishikawa, H. Yamazaki, T. Nonaka and Y. Uraoka "Highly Reliable Polysilsesquioxane Passivation Layer for a-InGaZnO Thin-Film Transistors ", Journal of Solid State Science and Technology 3(2), Q16-Q19 (2014)
7	M. Uenuma, B. Zheng, K. Bundo, M. Horita, Y. Ishikawa, H. Watanabe, I. Yamashita and Y. Uraoka "Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin ", Journal of Crystal Growth 382, pp 31-35 (2013)
8	Y. Ishikawa, S. Araki, M. Zhang and Y. Uraoka, "Size Control in ZnO Nano-pillar Fabrication using a Gel-Nanoimprint Process ", Applied Mechanics and Materials 372, pp 149-152 (2013)
9	Y. Ueoka, Y. Ishikawa, N. Maejima, F. Matsui, H. Matsui, H. Yamazaki, S. Urakawa, M. Horita, H. Daimon, and Y. Uraoka, "Analysis of electronic structure of amorphous InGaZnO/SiO₂ interface by angleresolved X-ray photoelectron spectroscopy ", J. Appl. Phys. 114, 163713 (2013)
10	Y. Mulyana, M. Horita, Y. Ishikawa, Y. Uraoka1 and S. Koh, "Thermal reversibility in electrical characteristics of ultraviolet/ozone-treated graphene ", Appl. Phys. Lett. 103, 063107 (2013)
11	H. Yamazaki, Y. Ishikawa, M. Fujii, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Ando, N. Maejima, H. Matsui, F. Matsui, H. Daimon, and Y. Uraoka, "The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability Toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors", ECS J. Sol. Stat. Sci. & Tech. 3, Q20, (2013)
12	L. Lu, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, "Effects of Si and Ti Impurities on Electrical Properties of Sol-Gel-Derived Amorphous SrTa₂O₆ Thin Films by UV/O₃ Treatment", Appl. Phys. A 112, 425-430 (2013)
13	Y. Kawamura, N. Hattori, N. Miyatake, and Y. Uraoka, "Comparison between ZnO Films Grown by Plasma-Assisted Atomic Layer Deposition Using H₂O Plasma and O₂ Plasma as Oxidant", J. Vac. Sci. Tech. A 31, 01A142-1~5 (2013)
14	E. Machida, M. Horita, K. Yamasaki, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, "Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature", J. Display Tech. 9, 741-746 (2013)
15	S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka, "Thermal Analysis of Amorphous Oxide Thin-Film Transistor Degraded by Combination of Joule Heating and Hot Carrier Effect", Appl. Phys. Lett. 102, 53506-1~4 (2013)
16	T. Hashimoto, Y. Fukunishi, B. Zheng, Y. Uraoka, T. Hosoi, T. Shimura, and H. Watanabe, "Electrical Detection of Surface Plasmon Resonance Phenomena by a Photoelectronic Device Integrated with Gold Nanoparticle Plasmon Antenna", Appl. Phys. Lett. 102, 83702-1~4 (2013)
17	S. Araki, Y. Ishikawa, M. Zhang, T. Doe, L. Lu, M. Horita, T. Nishida, and Y. Uraoka, "Fabrication of Zinc Oxide Nanopatterns by Quick Gel-Nanoimprint Process toward Optical Switching Devices", Jpn. J. of Appl. Phys. 52, 03BA02-1~5 (2013)

2012

1	T. Doe, Y. Ishikawa, M. Horita, T. Nishida, and Y. Uraoka, "Size Control of ZnS Nanoparticles by Electro-Spray Deposition Method", Jpn. J. Appl. Phys. 51, 03CC02 (2012)
2	L. Lu, Y. Miura, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, and Y. Uraoka, "Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k SrTa₂O₆", Jpn. J. Appl. Phys. 51, 03CB05 (2012)
3	K. Yamasaki, E. Machida, M. Horita, Y. Ishikawa, and Y. Uraoka, "Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing", Jpn. J. Appl. Phys. 51, 03CA03 (2012)
4	T. Nishida, K. Fuse, M. Furuta, Y. Ishikawa, and Y. Uraoka, "Crystallization Using Biomineralized Nickel nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation", Jpn. J. Appl. Phys. 51, 03CA01 (2012)
5	M. Uenuma, B. Zheng, K. Kawano, M. Horita, Y. Ishikawa, I. Yamashita and Y. Uraoka, "Guided filament formation in NiO-resistive random access memory by embedding gold nanoparticles", Appl. Phys. Lett. 100, 083105 (2012)
6	Y. Kawamura, M. Tani, N. Hattori, N. Miyake, M. Horita, Y. Ishikawa, and Y. Uraoka, "Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition", Jpn. J. Appl. Phys. 51, 02BF04 (2012)
7	M. Uenuma, B. Zheng, T. Imazawa, M. Horita, T. Nishida, Y. Ishikawa, H. Watanabe, I. Yamashita and Y. Uraoka, "Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin", Applied Surface Science 258, 3410 (2012)
8	L. Lu, T. Nishida, M. Echizen, K. Uchiyama, and Y. Uraoka, "Capacitance-voltage and leakage-current characteristics of sol-gel-derived crystalline and amorphous SrTa₂O₆ thin films", Thin Solid Films 520, 3620 (2012)
9	B. Zheng, M. Uenuma, Y. Uraoka, and I. Yamashita, "Bioconjugates Containing Ferritin and Metal Nanoparticles", Adv. Mat. Res. 463-464, 833-836 (2012)
10	A. D. Malay, J. G. Heddle, S. Tomita, K. Iwasaki, N. Miyazaki, K. Sumitomo, H. Yanagi, I. Yamashita, and Y. Uraoka, "Gold Nanoparticle-Induced Formation of Artificial Protein Capsids", Nano Lett. 12, 2056-2059 (2012)
11	L. Lu, M. Echizen, T. Nishida, Y. Ishikawa, U. Uchiyama, and Y. Uraoka, "Low-Temperature Fabrication of Solution-Processed InZnO Thin-Film Transistors with Si Impurities by UV/O₃-Assisted Annealing", AIP Adv. 2, 32111-1~6 (2012)
12	Y. Ueoka, M. Fujii, H. Yamazaki, M. Horita, Y. Ishikawa, and Y. Uraoka, "Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capacitance-Voltage Method", Mater. Res. Soc. Symp. Proc. 1436, mrss12-1436-k-5-28-1~6 (2012)
13	M. M. Ombaba, T. Hasegawa, L. Lu, Y. Yasuda, M. Kimura, T. Nishida, S. Koh, Y. Uraoka, and M. S. Islam, "Highly Flexible, Transparent and Electrically Conducting Silver Nanoparticles Films Enabled by Controlled Sedimentation", Mater. Res. Soc. Symp. Proc. 1436, mrss12-1436-k-8-35-1~5 (2012)
14	S. Kumagai, H. Murase, T. Tomikawa, S. Ogawa, I. Yamashita, Y. Uraoka, and M. Sasaki, "Controlling Crystallization Structures in Thin Si Film for Improving Characteristics of MEMS Resonators", Mater. Res. Soc. Symp. Proc. 1427, mrss12-1427-b-9-3-1~6 (2012)
15	T. Hashimoto, N. Zettsu, B. Zheng, M. Fukuta, I. Yamashita, Y. Uraoka, and H. Watanabe, "Practical Protein Removal Using Atmospheric-Pressure Helium Plasma for Densely Packed Gold Nanoparticle Arrays Assembled by Ferritin-Based Encapsulation/Transport System", Appl. Phys. Lett. 101, 073702-1~5 (2012)
16	M. Fukuta, N. Zettsu, I. Yamashita, Y. Uraoka, and H. Watanabe, "The Adsorption Mechanism of Titanium-Binding Ferritin to Amphoteric Oxide", Colloids and Surfaces B 102, 435-440 (2012)
17	B. Zheng, M. Uenuma, N. Okamoto, R, Honda, Y, Ishikawa, Y. Uraoka, and I.Yamashita, "Construction of Au Nanoparticle/Ferritin Satellite Nanostructure", Chem. Phys. Lett. 547, 52-57 (2012)
18	L. Lu, T. Nishida, M. Echizen, Y. Ishikawa, K. Uchiyama, T. Shiosaki, and Y. Uraoka, "Thermally Stimulated Current Analysis of Defects in Sol-Gel Derived SrTa₂O₆ Thin-Film Capacitors", Jpn. J. of Appl. Phys. 51, 09LA18-1~4 (2012)
19	Y. Kawamura, M. Horita, Y. Ishikawa, and Y. Uraoka, "Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition", J. Display Tech. 9, 694-698 (2012)
20	M. Kobayashi, S. Tomita, K. Sawada, K. Shiba, H. Yanagi, I. Yamashita, and Y. Uraoka, "Chiral Meta-Molecules Consisting of Gold Nanoparticles and Genetically Engineered Tobacco Mosaic Virus", Opt. Exp. 20, 24856-24863 (2012)
21	S. Kumagai, H. Murase, S. Miyachi, N. Kojima, Y. Oshita, M. Yamaguchi, I. Yamashita, Y. Uraoka, and M. Sasaki, "Improving Crystallinity of Thin Si Film for Low-Energy-Loss Micro-/Nano-Electromechanical Systems Devices by Metal-Induced Lateral Crystallization Using Biomineralized Ni Nanoparticles", Jpn. J. of Appl. Phys. 51, 11PA03-1~5 (2012)
22	E. Machida, M. Horita, Y. Ishikawa, Y. Uraoka, and H. Ikenoue, "Crystallization to Polycrystalline Silicon Thin Film and Simultaneous Inactivation of Electrical Defects by Underwater Laser Annealing", Appl. Phys. Lett. 101, 252106-1~4 (2012)

2011

1	L. Lu, T. Nishida, M. Echizen, K. Uchiyama and Y. Uraoka, "Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa₂O₆ Thin Films Fabricated by Sol-Gel Method", Ferroelectrics 421, 82, (2011)
2	M. Fujii, Y. Ishikawa, M. Horita, and Y. Uraoka, "Unique Phenomenon in Degradation of Amorphous In₂O₃-Ga₂O₃-ZnO Thin-Film Transistors under Dynamic Stress", Applied Physics Express 4, 104103, (2011)
3	K. Ohara, B. Zheng, M. Uenuma, Y. Ishikawa, K. Shiba, I. Yamashita, and Y. Uraoka, "Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method", Applied Physics Express 4, 085004, (2011)
4	M. Kobayashi, S. Kumagai, B. Zheng, Y. Uraoka, T. Douglas, and I. Yamashita, "Water-soluble carbon nanotube network conjugated by nanoparticles with defined nano-meter gaps", Chem. Commun. 47, 3475-3477, (2011)
5	B. Zheng, M. Uenuma, K. Iwahori, N. Okamoto, N. Naito, Y. Ishikawa, Y. Uraoka and I. Yamashita, "Sterically controlled docking of gold nanoparticles on ferritin surface by DNA hybridization ", Nanotechnology 22, 275312, (2011)
6	I. Hanasaki, Y. Isono, B. Zheng, Y. Uraoka, and I. Yamashita, "Adsorption Density Control of Ferritin Molecules by Multistep Alternate Coating", Jpn. J. of Appl. Phys. 50, 065201-1-6 (2011)
7	I. Hanasaki, T. Tanaka Y. Isono, B. Zheng, Y. Uraoka, and I. Yamashita, "Location and Density Control of Carbon Nanotubes Synthesized Using Ferritin Molecules ", Jpn. J. of Appl. Phys. 50, 075102-1-6 (2011)
8	I. Inoue, B. Zheng, K. Watanabe, Y. Ishikawa, K. Shiba, H. Yasueda, Y. Uraoka, and I. Yamashita, "A Novel Bifunctional Protein Supramolecule for Construction of Carbon Nanotube-Titanium Hybrid Material ", Chem. Comm. 47, 12649-12651 (2011)
9	T. Hashimoto, K. Gamo, M. Fukuta, B. Zheng, N. Zettsu, I. Yamashita, Y. Uraoka, and H. Watanabe, "Control of Selective Adsorption Behavior of Ti-Binding Ferritin on a SiO₂ Substrate by Atomic-Scale Modulation of Local Surface Charges", Appl. Phys. Lett. 99, 263701-1-4 (2011)
10	M. Uenuma, K. Kawano, B. Zheng, N. Okamoto, M. Horita, S. Yoshii, I. Yamashita and Y. Uraoka, "Resistive random access memory utilizing ferritin protein with Pt nanoparticles", Nanotechnology 22, 215201, (2011)
11	K. Ohara, Y. Tojo, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru, and Y. Uraoka, "Floating Gate Memory with Biomineralized Nanodots Embedded in HfO₂", IEEE Trans. Nanotechnology 10, Issue 3, 576, (2011)
12	Y. Kawamura, N. Hattori, N. Miyatake, M. Horita, and Y. Uraoka, "ZnO Thin Films Fa-bricated by Plasma-assisted Atomic Layer Deposition", Jpn. J. Appl. Phys. 50, 04DF05, (2011)
13	Y. Tojo, A. Miura, I. Yamashita, and Y. Uraoka, "Positional Control of Crystal Grains in Silicon Thin Film Utilizing Cage-Shaped Protein", Jpn. J. Appl. Phys. 50, 04DL12, (2011)
14	L. Lu, T. Nishida, M. Echizen, K. Uchiyama, and Y. Uraoka, "Thickness Dependence of Electrical Properties for High-k SrTa₂O₆ Thin Films Fabricated by Sol-Gel Method", Jpn. J. Appl. Phys. 50, 03CA05, (2011)
15	B. Zheng, N. Zettsu, M. Fukuta, M. Uenuma, T. Hashimoto, K. Gamo, Y. Uraoka, I. Yamashita, and H. Watanabe, "Versatile protein-based bifunctional nano-systems (encapsulation and directed assembly): Selective nanoscale positioning of gold nanoparticle-viral protein hybrids", Chem. Phys. Lett. 506, 76, (2011)

2010

1	L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Electrical properties of Ba_0.5Sr_0.5Ta₂O₆ thin film fabricated by Sol-Gel method", IEICE Trans. on Electronics E93-C, 1511, (2010)
2	L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Annealing and Composition Effects of (Ba_xSr_1-x)Ta₂O₆ Thin Films Fabricated by Sol-Gel Method", Jpn. J. Appl. Phys. 49, 09MA14, (2010)
3	C. -H. Huang, M. Igarashi, S. Horita, M. Takeguchi, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application", Jpn. J. Appl. Phys. 49, 04DL16, (2010)
4	L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Electrical properties of (Ba_xSr_1-x)Ta₂O₆ thin films using Sol-Gel methods", Trans. of the Mat. Res. Soc. of Japan 35, 177, (2010)
5	M. Horita, T. Kimoto, J. Suda, "Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1-100)", Appl. Phys. Exp., 3 51001-51003 (2010)
6	T. Nishida, K. Kubo, M. Echizen, H. Takeda, K. Uchiyama, and T. Shiosaki, "Fabrication of PbTiO₃ Nanocrystals on Atomically Flat Sapphire Substrates by Sputtering", Key Eng. Mat., 421-422 502-505, (2010)
7	T. Nozaka, Y. Mizutani, G. Bhakdisongkhram, K. Kawakami, M. Echizen, T. Nishida, H. Takeda, K. Uchiyama, and T. Shiosaki, "Preparation of (Ba_1-x,Sr_x)TiO₃ Thin Films on Glazed Alumina Substrate and Improvement of Temperature Dependence of Dielectric Properties", Key Eng. Mat., 421-422 127-130, (2010)
8	Y. Yoneda, H. Saitoh, K. Yoshii, T. Nishida, H. Hayakawa, and N. Ikeda, "Growth and characterization of bismuth magnesium titanate Bi(Mg_1/2Ti_1/2)O₃", Key Eng. Mat., 421-422 30-33, (2010)
9	B. Zheng, M. Uenuma, Y. Uraoka, and I. Yamashita, "Construction of ferritin dimer by breaking its symmetry", Nanotechnology 21, 445602, (2010)
10	B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka, "Site-directed delivery of ferritin-encapsulated gold nanoparticles", Nanotechnology 21, 045305, (2010)
11	Y. Kawamura, M. Horita, and Y. Uraoka, "Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition", Jpn. J. Appl. Phys. 49, No.4, 04DF19, (2010)
12	Y. Kawamura, K. Yamasaki, T. Yamashita, Y. Sugawara, Y. Uraoka, and M. Kimura "Crystallization by Green-laser Annealing for Three-dimensional Device Application", J. Korean Phys. Soc. 56, No.5, 1456, (2010)
13	K. Yamasaki, M. Ochi, Y. Sugawara, I. Yamashita, and Y. Uraoka, "Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin", J. Korean Phys. Soc. 56, No.3, 842, (2010)
14	K. Ohara, I. Yamashita, and Y. Uraoka, "Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator", Jpn. J. Appl. Phys. 49, 04DJ05, (2010)
15	B. Zheng, I. Yamashita, M. Uenuma, K. Iwahori, M. Kobayashi, and Y. Uraoka, "Site-directed delivery of ferritin-encapsulated gold nanoparticles", Nanotechnology 21, No.4, 045305, (2010)

2009

1	M. Horita, T. Kimoto, and J. Suda, "Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (11-20) and (1-100) Planes under Group-III-Rich Conditions", Applied Physics Express 2, 091003, (2009)
2	C. Huang, M. Igarashi, M. Wone, Y. Uraoka, T. Fuyuki, M. Takeguchi, I. Yamashita, and S. Samukawa, "Two-Dimesional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices", Jpn. J. Appl. Phys. 48, 04C187-1, (2009)
3	A. Miura, R. Tanaka, Y. Uraoka, N. Matsukawa, and I. Yamashita, "The characterization of a single discrete bionanodot for memory device application", Nanotechnology 20, 125702-1, (2009)
4	M. Fujii, Y. Uraoka, T. Fuyuki, J. S. Jung and J. Y. Kwon, "Experimental and Theoretical Analysis of Degradation in Ga₂O₃-In₂O₃-ZnO Thin-Film Transistors", Jpn. J. Appl. Phys. 48, 04C091-1, (2009)
5	Y. Tojo, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Controlled Reduction of Bionanodots for Better Charge Strage Characteristics of Bionanodots Flash Memory", Jpn. J. Appl. Phys. 48, 04C190-1, (2009)
6	K. Ohara, I. Yamashita, T. Yaegashi, M. Moniwa, H. Yoshimaru, and Y. Uraoka, "Floating gate memory with biomineralized nanodots embedded in High-k gate dielectric", Applied Physics Express 2, 095001, (2009)
7	E. Machida, Y. Uraoka,T. Fuyuki, R. Kokawa, T. Ito, and H. Ikenoue, "Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy", Appl. Phys. Lett. 94, 182104, (2009)
8	K. Uchiyama, Y. Isse, Y. Hori, T. Nishida, Y. Uraoka, T. Kariya, and K. Yanagimoto, "Structural and Electrical Characterization of Y-Doped SrZrO₃ Thin Films for Solid Oxide Fuel Cells", Proceedings of the sixth Thin-Films Materials and Devices Meeting 100228102-1, (2009)
9	L. Lu, M. Echizen, T. Nishida, K. Uchiyama, and Y. Uraoka, "Fabrication and Evaluation of SrTa₂O₆ Thin Films Using Chemical Solution Deposition Method", Proceedings of the sixth Thin-Films Materials and Devices Meeting 100228043-1, (2009)
10	Y. Kawamura and Y. Uraoka, "Electrical properties of ZnO-TFTs by atomic layer deposition", Proceedings of the sixth Thin-Films Materials and Devices Meeting 100228074-1, (2009)
11	Y. Kawamura and Y. Uraoka, "ZnO Thin Film Transistors fabricated by atomic layer deposition", Proceedings of the Fall Meeting of Material Research Society 1201, 1201-H10-27, (2009)
12	M. Fujii, T. Maruyama, M. Horita, K. Uchiyama, J. S. Jung, J. Y. Kwon, and Y. Uraoka, "Electrical and thermal stress analysis of In₂O₃-Ga₂O₃-ZnO thin-film transistors", Proceedings of the Fall Meeting of Material Research Society 1201, 1201-H05-11, (2009)
13	K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, and M. Yoshimaru, "Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics", Jpn. J. Appl. Phys. 48, No.4, (2009)
14	T. Sato, A. Ueno, T. Yara, E. Miyamoto, Y. Uraoka, T. Kubota, and S. Samukawa, "Irradiatio-damages in atmospheric plasma used in a resist ashing process for thin film transitors", Jpn J. Appl. Phys. 48, No.3, 03B009, (2009)

2008	2000～2008年の論文は、浦岡教授がNAISTの旧微細素子科学研究室で助教授を務めていた際に発表されたものです。

1	A. Miura, Y. Uraoka, T. Fuyuki, S. Kumagai, S. Yoshii, N. Matsukawa, and I. Yamashita, "Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node", J. Appl. Phys., 103, No.7, 074503-1, (2008)
2	A. Miura, R. Tsukamoto, S. Yoshii, I. Ymashita, Y. Uraoka, and T. Fuyuki, "Non-volatile flash memory with discrete bionanodt floating gate assembled by protein template", Nanotechnology, 19, (208), 255201, (2008)
3	M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon, "Thermal analysis of degradation in Ga₂O₃-In₂O₃-ZnO thin film transistors", Jpn. J. Appl. Phys., 47, No.8, 6236 , (2008)
4	S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes in Co-Ferritin Nanoparticles Induced by Ion Bombardment as Determined by Kelvin Probe Force Microscopy in High Vacuum", Jpn. J. Appl. Phys., 47, No.8, 6160, (2008)
5	S-I. Yamamoto, K. Kobayashi, H. Yamada, H. Yoshioka, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Electrical Characterisitics of ferritin cores Investegated by Kelvin Probe Force Microscopy", Journal of Physics, 100, 52004, (2008)
6	S-I. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes in Co-Ferritin nanoparticles Induced by Ion Bombardment as Determined by Kelvin Probe Force Microscopy in High Vacuum", Jpn. J. Appl. Phys., 47, No.7, 6160, (2008)
7	S. Samukawa, T. Kubota, C. H. Huang, T. Hashimoto, M. Igarashi, K. Nishioka, M. Takeguchi, Y. Uraoka, and I. Yamashita, "New silicon quantum-well structure with controlled diameter and thickness fabricated with ferritin core amsk and chlorine neutral etrching", Applied Physics Express, 1, No.7, 0474002, (2008)
8	S. Yamamoto, K. Kobayashi, H. Yamada, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Surface Potential Evaluations of Ferritin Nanodots by Kelvin Force Microscopy", Journal of Scann Pobe Microsc., 3, 1, (2008)
9	T. Nakamura, H. Kuraseko, K. Hanazawa, H. Koaizawa, Y. Uraoka, T. Fuyuki, and A. Mimura, "Fabrication of Poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate", Appl. Phys. Lett., 93, 241503, (2008)

2007

1	S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Thermal Degradation Under Pulse Operation in Low-Temperature p-channel Poly-Si Thin Film Transistors", IEEE/T-ED, 54, No.2, 297, (2007)
2	H. Ueno, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, K. B. Park, J. M. Kim, J. Y. Kwon, and T Noguchi, "Reliability Analysis of Ultra-Low-Temperature Poly-Si Thin Film Transistors", Jpn. J. Appl. Phys., 46, No.3B, 1303, (2007)
3	Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing", Jpn. J. Appl. Phys. Lett, 46, No.8, L164, (2007)
4	Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Evaluation by μ-PCD in Double-Layered Poly-Si Thin FilmsCrystallized by Solid Green Laser Annealing", Jpn. J. Appl. Phys., 46, No.12, 7607, (2007)
5	Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, and A. Mimura, "Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High Performance Thin Film Transistors", IEEE EDL., 28, No.5, 395, (2007)
6	H. Ueno, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, and T. Serikawa, "Reliability of low temperature poly-Si Thin Film Transistors with ultrathin gate oxide", Jpn. J. Appl. Phys., 46, No.7A, (2007)
7	K. Ichikawa, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, E. Takahashi, T. Hayashi, and K. Ogata, "Low temperature poly-Si Thin Film Transistors flash memory with Si nanocrystal dot", Jpn. J. Appl. Phys. Lett. 46, No.27, L661, (2007)
8	T. Kubota, T. Hashimoto, Y. Ishikawa, A. Miura, M. Takeguchi, K. Nishioka, R. Tanaka, K. Ichikawa, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Coulomb-staircase effect in silicon-nanodisk structures fabricated by low-energy chlorine netral beams", J. Appl. Phys., 101, 124301, (2007)
9	T. Kubota, T. Baba, S. Saito, S. Yamazaki, S. Kumagai, T. Matsui, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Low-damage fabrication of high aspect nanocolumns by using netral beams and ferritin-iron-core mask", J. Vac. Sci Technok. B, 25, (3), 760, (2007)
10	K. Yamada, S. Yoshii, S.Kumagai, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Effects of Dot Density and Dot Size on Charge Injection Characteristics in Nanodot Array Produced by Protein Supramolecules", Jpn J. Appl. Phys., 46, No.11, 7549, (2007)
11	A. Miura, Y. Uraoka, T. Fuyuki, S. Kumagai, S. Yoshii, N. Matsukawa, and I. Yamshita, "bionaodot monolayer array fabrication for nonvolatile memory application", Surface Science Letters, 601, L.81, (2007)
12	K. Ichikawa, Y. Uraoka, P. Punchaipetch, H. Yano, T. Hatayama, T. Fuyuki, and I. Yamashita, "Low-temperature poly-Si TFT flash memory with ferritin", Jpn. J. Appl. Phys., 46, No.34, L804, (2007)
13	S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Surface Potential Difference of Biomineralized Inorganic nanodot by Kelvin Force Microscopy", Jpn. J. Appl. Phys., 46, No.8B, 5647, (2007)
14	S. Yamamoto, H. Yoshioka, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Compositional Changes Induced by Ion Bombardment in Ferrtin Nanoparticles", Journal of Physics, 61, 1276, (2007)
15	Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber", Appl. Phys. Lett., 91, 203518, (2007)
16	S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Suppression of Self-Heating in Low-Temperature Polycrystalline Silicon Thin Film Transitors ", Jpn. J. Appl. Phys., 46, 4A, 1387, (2007)

2006

1	S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita, "Analysis of Thermal Distribution in Low Temperature Polycrystalline Silicon p-channel Thin Film Transistors", Jpn. J. Appl. Phys., 45, No.1A, 7, (2006)
2	T. Hikono, T. Matsumura, A. Miura, Y. Uraoka, T. Fuyuki, M. Takeguchi, S. Yoshii, and I. Yamashita, "Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein", Appl. Phys. Lett., 88, 023108, (2006)
3	T. Hikono, Y. Uraoka, T. Fuyuki, M. Takeguchi, and I. Yamashita, "Reduction of Core in Cage Protein for Application to Electron Device", Surface Science, 600, 2817, (2006)
4	P. Punchaipetch, M. Miyashita, Y. Uraoka, T. Fuyuki, T. Sameshima, and S. Horii, "Improving High-k Gate Dielectric Properties by High-Pressure Water Vapor Annealing", Jpn. J. Appl. Phys., 45, No.4, L120, (2006)
5	Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Evaluation Technique for Reliability in Low-Temperature Poly-Si Thin Film Transistors", J. Korean Phys. Soc., 48, S55, (2006)
6	A. Miura, T. Hikono, T. Matsumura, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, S. Yoshii, and I. Yamashita, "Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as A Storage Node", Jpn. J. Appl. Phys, 45, No.01, L1, (2006)
7	P. Punchaipetch, K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, T.Hayashi, and K. Ogata, "Charge Transport though Si Nanocrystal Dots Depending on Tunnel Oxide Thickness in Floating Gate Memories", J. Jpn. J. Appl. Phys., 45, No.5A, 3997, (2006)
8	P. Punchaipetch, K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, and T.Hayashi, "Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories", J.Vac. Sci. Technol., B24, (3), 1271, (2006)
9	Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama,T. Fuyuki, and T. Sameshima, "Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing", Jpn J. Appl. Phys., 45, No.7, 5657, (2006)
10	K. Yamada, S. Yoshii, S.Kumagai, A. Miura, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Floating Gate MOS Capacitor Employing Array of High-Density Nanodots Produced by Protein Supermolecule", Jpn J. Appl. Phys., 45, No.11, 8946, (2006)
11	Y. Uraoka, M. Miyashita, Y. Sugawara, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Effect in Low Temperature Poly-Si TFTs with Sputtered Gate SiO₂ Film", J. Korean Phys. Soc., 49, No.4, 1477, (2006)
12	K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. Hayashi, and K. Ogata, "New Fabrication Technique for the Floating Gate Memory with Si Nanodot using Side-Wall Type Plasma Enhanced Chemical Vapor Deposition", J. Korean Phys. Soc., 49, No.2, 569, (2006)
13	P. Punchaipetch, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. Hayashi, A. Sano, and S. Horii, "Enhancing memory efficiency of Sinanocrystal floating gate memories with high-k gate oxides", Appl. Phys. Lett., 89, 1, (2006)
14	T. Serikawa, M. Miyashita, Y. Uraoka, and T. Fuyuki, "Sputter-Deposited Thin Gate SiO₂ Films for High Quality Polycrystalline Silicon Thin Film Transistors", Jpn. J. Appl. Phys., 45, No.5B, 4358, (2006)
15	T. Kubota, T. Hashimoto, Y. Ishikawa, A. Miura, M. Takeguchi, K. Nishioka, R. Tanaka, K. Ichikawa, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Charging and coulomb Staircase effects in silicon nano-disc Structure Fabricated by defect-free Cl Neutral Beam Process", Appl. Phys. Lett., 89, 233127 (2006)

2005

1	T. Yamazaki, Y. Uraoka, and T. Fuyuki, "Large grain poly crystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply", Thin Solid Film, 487, 26, (2005)
2	S. Honda, T. Mates, M. Ledinsky, J. Oswald, A. Fejfar, J. Kocka, T. Yamazaki, Y. Uraoka, and T. Fuyuki, "Effect of hydrogen passivation on polycrystalline silicon thin films", Thin Solid Films, 487, issue 1-2, 152, (2005)
3	T. Kubota, T. Baba, H. Kawashima, Y. Uraoka, T. Fuyuki, I. Yamashita, and S. Samukawa, "Study on neutral-beam etching conditions for fabrication of 7-nm-diameter nanocolumn structure using ferritin iron-core masks", J. Vac. Sci. Technol., B23, (2), 534, (2005)
4	Y. Uraoka, K. Kitajima, H. Kirimura, H. Yano, T. Hatayama, and T. Fuyuki, "Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries", Jpn. J. Appl. Phys., 44, 2895, (2005)
5	H. Kirimura, Y. Uraoka, T. Fuyuki, M. Okuda, and I. Yamashita, "Study of low-temerature crystallization of amorphous Si film obtained using ferritin with Ni nanoparticles", Appl. Phys. Lett., 86, 262106, (2005)
6	K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, E. Takahashi, T. Hayashi, and K. Ogata, "Electon Injection into Si Nanodot Fabricated by Side-Wall Plasama Enhanced Chemical Vapor Deposition", Jpn. J. Appl. Phys., 44, 26, L836, (2005)
7	T. Fuyuki, K.Kitajima, H. Yano, T. Hatayama, Y. Uraoka, S. Hashimoto, and Y. Morita, "Thermal degradation of low temperature poly-Si TFT", Thin Solid Film, 216, (2005)
8	Y. Uraoka, H. Honda, T. Fuyuki, T. Sasaki, and M. Yasuhira, " Hot Carrier Effect in Ultra Thin Gate Oxide Metal Oxide Semiconductor Field effect Transistors", Jpn. J. Appl. Phys., 44, 8, 5889, (2005)

2004

1	Y. Uraoka, N. Hirai, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Analysis in Low-Temperature Poly-Si TFTs Using Picosecond Emission Microscope", IEEE Trans. Electron Devices, 51, No.1, 28, (2004)
2	T. Kubota, T. Baba, S. Samukawa, H. Kawashima, Y. Uraoka, T. Fuyuki, and I. Yamashita, "A 7-nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams", Appl. Phys. Lett., 84, No.9, 1555, (2004)
3	H. Kirimura, K. Kubota, E. Takahashi, S. kishida, K. Ogata, Y. Uraoka, and T. Fuyuki, "Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals", Jpn. J. Appl. Phys., 43, No.12, 7929, (2004)
4	P. Punchaipetch, T. Okamoto, H. Nakamura, Y. Uraoka, T. Fuyuki, and S. Horii, "Effect of Nitrogen on Electrical and Physcal Properties of Polyatomic Layer Chemical Vapor Deposition HfSiO Gate Dielectrics", Jpn. J. Appl. Phys., 43, 7815, (2004)

2003

1	Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen", Jpn, J. Appl. Phys., 42, 1145, (2003)
2	M. Furuta, Y. Uraoka, and T. Fuyuki, "Reliability of Low-Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures", Jpn. J. Appl. Phys., 42, 4257, (2003)
3	Y. Inoue, H. Ogawa, T. Endo, H. Yano, T. Hatayama, Y. Uraoka, and T. Fuyuki, "Reliability of Low Temperature Poly-Si Thin Film Transistors", Solid State Phenomena, 93, 43, (2003)
4	T. Kawakita, H. Nakagawa, Y. Uraoka, and T. Fuyuki, "Analysis of Hot Carrier Effect in Low Temperature Poly-Si Gate-Overlapped Lightly Doped Drain Thin Film Transistors", Jpn. J. Appl. Phys., 42, 3354, (2003)
5	T. Hikono, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Novel Method for making Nanodot Arrays using a cage-like Protein", Jpn. J. Appl. Phys., 42, L.398, (2003)
6	G. Yamazaki, Y. Uraoka, T. Fuyuki, and I. Yamashita, "Nano-etching Using Nanodits Mask Fabricated by Bio-nano-process", Journal of Photopolymer Science and Technology, 16, No.3, 439, (2003)
7	H. Nakagawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, and Y. Morita, "Hot Carrier Effect in Low Temperature Poly-Silicon p-Channel Thin Film Transistors", Solid State Phenomena, 93, 31, (2003)
8	Y. Uraoka, N. Hirai, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Analysis in Low-Temperature Poly-Si Thin Film Transistors Using Pico-Second Time-Resolved Emission Microscope", IEEE Elecron Device Letters, 24, No.4, 236, (2003)

2002

1	Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen", Jpn. J. Appl. Phys., 41, 3637, (2002)
2	Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin Film Transitors under Dynamic Stress", Jpn, J.Appl. Phys., 41, L13, (2002)
3	Y. Uraoka, Y. Morita, H. Yano, T. Hatayama, and T. Fuyuki, "Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystalline-Silicon P-Channel Thin Film Transistors", Jpn. J. Appl. Phys., 41, 5894, (2002)
4	Y. Uraoka, H. Yano, T. Hatayama, and T. Fuyuki, "Comprehensive Study on reliability of Low-Temperature Poly-Si Thin Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations", Jpn. J. Appl. Phys., 41, 2414, (2002)
5	T.Kawakita, H.Nakagawa, Y. Uraoka, and T. Fuyuki, "Reliability of Low Temperature Poly-Si GOLD(Gate-Overlapped LDD) Structure TFT", IEICE Trans Electron., E85-C, No.11, (2002)

2001

1	T. Fuyuki and Y. Uraoka , "Analysis of Hot Carrier Effect in Low-Temperature Poly-Si Thin Film Transistors Toward High Reliability", Solid State Phenomena, 80-81, 349, (2001)
2	Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Reliability of Low Temperature-silicon TFTs under Inverter Operation", IEEE/Trans Electron Device Vol.48, No.10, pp.2370-2374, (2001)
3	Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors", Jpn. J. Appl. Phys., 40, 2833, (2001)

2000

1	Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Reliability of High-Frequency Operation of Low-Temperature Polysilicon Thin Film Transistors under Dynamic Stress", Jpn. J. Appl. Phys., 39, L1209, (2000)