We are conducting research on enhancing the performance of oxide semiconductor thin film transistor for the realization of flexible displays.
By utilizing two deposition methods: vacuum and solution process deposition, we aim to achieve a high performance using low temperature processes.
● High performance solution processed gate insulators and passivation layers
●Development of highly reliable, low voltage driven IGZO TFT by iontronics
● Improvement of oxide TFT using High-k dielectric thin films prepared by solution and vacuum process
●Development of a self-aligned process by selectively controlling electrical conductivity of oxide semiconductors
Because thermoelectric conversion elements can generate electric power directly from waste heat such as body heat and ambient heat,
by improving the material performance through innovation of its properties and structure, we can expect these to be used as an ubiquitous power source.
Currently, we focus on amorphous materials with low thermal conductivity.
We are aiming to achieve a high performance using transparent amorphous oxide semiconductors which can be deposited on flexible substrates.
We are also aiming at improving performance by reducing the thermal conductivity through the formation of nanostructures.
In this research group, we are developing photoelectric conversion elements and characterization techniques for both outdoor and indoor applications. Currently, we focus and conduct research on the following topics.
(1) Development of extra low cost fabrication methods for crystalline silicon solar cells
(2) Development of technology for early detection of solar cell degradation through an electroluminescence (EL) method
(3) Development of photoelectric conversion device using FeS2 pyrite
(4) Development of perovskite type solar cells for low light intensity applications
From an energy conservation viewpoint, low power loss from power devices which are key components of power conversion of inverters etc. is required.
GaN (gallium nitride), which is a nitride semiconductor, is attracting attention as a semiconductor material for power device applications. With GaN,
realization of high efficiency / low loss device exceeding the limit of currently used Si (silicon) power device is rising.
The development of next-generation GaN power devices is currently a very significant research.
We focus on the oxide film deposition process and annealing process in the MOS structure with the metal-insulator-semiconductor layer structure.
We are also promoting the improvement of characteristics and the evaluation of basic physical properties.
Diamond have excellent physical properties and is a material that can be the ultimate semiconductor.
In recent years, research that utilizes diamond as a semiconductor has attracted attention,
and our laboratory also has begun efforts to improve the characteristics of diamond semiconductors.